Patents by Inventor LIANG-QI OUYANG

LIANG-QI OUYANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering target, oxide semiconducting film, and method for making the same
    Patent number: 9840769
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
    Type: Grant
    Filed: October 26, 2015
    Date of Patent: December 12, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Liang-Qi Ouyang, Ru-Jun Sun
  • Method for making tin oxide thin film
    Patent number: 9828667
    Abstract: A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: November 28, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Li Guo, Ming-Jie Cao, Liang-Qi Ouyang, Leng Zhang
  • SPUTTERING TARGET, OXIDE SEMICONDUCTING FILM, AND METHOD FOR MAKING THE SAME
    Publication number: 20170037506
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
    Type: Application
    Filed: October 26, 2015
    Publication date: February 9, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, LIANG-QI OUYANG, RU-JUN SUN
  • METHOD FOR MAKING TIN OXIDE THIN FILM
    Publication number: 20160329196
    Abstract: A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1.
    Type: Application
    Filed: September 1, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, LI GUO, MING-JIE CAO, LIANG-QI OUYANG, LENG ZHANG