Patents by Inventor Liang-Sheng Chi
Liang-Sheng Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11810943Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: September 1, 2022Date of Patent: November 7, 2023Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Publication number: 20230005984Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: September 1, 2022Publication date: January 5, 2023Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung- Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Patent number: 11437427Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: January 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Publication number: 20200243598Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: January 23, 2020Publication date: July 30, 2020Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung-Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Publication number: 20190237628Abstract: A light-emitting device includes: a light-emitting stack formed on a first conductivity type contact layer and including an active layer and a second conductivity type semiconductor layer on the active layer; a first trench dividing the light-emitting stack into a first portion and a second portion, wherein the first trench includes a bottom exposing a top surface of the first conductivity type contact layer; a non-conductive material layer formed in the first trench and being a film conformal to a profile of the first trench; a connecting layer formed in the first trench and electrically connecting the first and the second portions of the light-emitting stack, wherein the connecting layer is a film conformal to a profile of the non-conductive material layer; and a first electrode formed on the first conductivity type contact layer and electrically connected to the first conductivity type semiconductor layer.Type: ApplicationFiled: April 10, 2019Publication date: August 1, 2019Inventors: Chen OU, Liang-Sheng CHI, Chun-WEI CHANG, Chih-Wei WU
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Patent number: 10290773Abstract: A light-emitting device is disclosed and comprises: a substrate; a light-emitting stack comprising a first conductivity type semiconductor layer, an active layer over the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer over the active layer; a transparent conductive layer over the a light-emitting stack; a first trench dividing the transparent conductive layer into a first block and a second block; a connecting layer electrically connecting the two blocks of the transparent conductive layer; a first conductivity type contact layer between the substrate and the first conductivity type semiconductor layer, wherein the conductivity of the first conductivity type contact layer is greater than the conductivity of the first conductivity type semiconductor layer.Type: GrantFiled: September 13, 2012Date of Patent: May 14, 2019Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Liang Sheng Chi, Chun Wei Chang, Chih-Wei Wu
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Patent number: 9583677Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.Type: GrantFiled: April 20, 2015Date of Patent: February 28, 2017Assignee: EPISTAR CORPORATIONInventors: Liang-Sheng Chi, Pei-Chia Chen, Chih-Hao Chen
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Patent number: 9224912Abstract: A method of fabricating an optoelectronic device, comprises: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.Type: GrantFiled: February 25, 2015Date of Patent: December 29, 2015Assignee: EPISTAR CORPORATIONInventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Publication number: 20150228856Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.Type: ApplicationFiled: April 20, 2015Publication date: August 13, 2015Inventors: Liang-Sheng CHI, Pei-Chia CHEN, Chih-Hao CHEN
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Publication number: 20150187986Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.Type: ApplicationFiled: February 25, 2015Publication date: July 2, 2015Inventors: Cheng Hsiang HO, Biau-Dar CHEN, Liang Sheng CHI, Chun Chang CHEN, Pei Shan FANG
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Patent number: 9012933Abstract: A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer includes a first portion and a second portion, and the second portion includes an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion includes a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.Type: GrantFiled: April 8, 2013Date of Patent: April 21, 2015Assignee: Epistar CorporationInventors: Liang-Sheng Chi, Pei-Chia Chen, Chih-Hao Chen
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Patent number: 9011638Abstract: A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.Type: GrantFiled: March 19, 2014Date of Patent: April 21, 2015Assignee: Epistar CorporationInventors: Chen-Ke Hsu, Liang Sheng Chi, Chun-Chang Chen, Win-Jim Su, Hsu-Cheng Lin, Mei-Ling Tsai, Yi Lung Liu, Chen Ou
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Patent number: 8987752Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions.Type: GrantFiled: May 17, 2013Date of Patent: March 24, 2015Assignee: Epistar CorporationInventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Publication number: 20140299901Abstract: A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.Type: ApplicationFiled: April 8, 2013Publication date: October 9, 2014Applicant: Epistar CorporationInventors: Liang-Sheng CHI, Pei-Chia CHEN, Chih-Hao CHEN
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Publication number: 20140202627Abstract: A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.Type: ApplicationFiled: March 19, 2014Publication date: July 24, 2014Applicant: EPISTAR CORPORATIONInventors: Chen-Ke HSU, Liang Sheng CHI, Chun-Chang CHEN, Win-Jim SU, Hsu-Cheng LIN, Mei-Ling TSAI, Yi Lung LIU, Chen OU
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Patent number: 8714227Abstract: A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.Type: GrantFiled: July 23, 2010Date of Patent: May 6, 2014Assignee: Epistar CorporationInventors: Chen-Ke Hsu, Liang-Sheng Chi, Chun-Chang Chen, Win-Jim Su, Hsu-Cheng Lin, Mei-Ling Tsai, Yi Lung Liu, Chen Ou
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Publication number: 20130306993Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions.Type: ApplicationFiled: May 17, 2013Publication date: November 21, 2013Inventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Patent number: 8039279Abstract: One embodiment of the invention relates to a method of manufacturing a light emitting diode. The method includes forming an insulating layer on an area, not covered by a seed layer, of at least one of a p-type semiconductor layer and an n-type semiconductor layer, wherein the impurity concentration varies on the surface of the area; and immersing at least part of the seed layer into an electrolyte having metal ions which tend to reduce and deposit on the seed layer under no bias voltage.Type: GrantFiled: August 7, 2007Date of Patent: October 18, 2011Assignee: Epistar CorporationInventors: Chia-Ming Chuang, Yu-Heng Shao, Liang-Sheng Chi, Yu-Chieh Huang, Tai-Chan Huo
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Publication number: 20110017407Abstract: A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.Type: ApplicationFiled: July 23, 2010Publication date: January 27, 2011Inventors: Chen-Ke Hsu, Liang-Sheng Chi, Chun-Chang Chen, Win-Jim Su, Hsu-Cheng Lin, Mei-Ling Tsai, Yi Lung Liu, Chen Ou
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Publication number: 20080032434Abstract: One embodiment of the invention relates to a method of manufacturing a light emitting diode. The method includes forming an insulating layer on an area, not covered by a seed layer, of at least one of a p-type semiconductor layer and an n-type semiconductor layer, wherein the impurity concentration varies on the surface of the area; and immersing at least part of the seed layer into an electrolyte having metal ions which tend to reduce and deposit on the seed layer under no bias voltage.Type: ApplicationFiled: August 7, 2007Publication date: February 7, 2008Applicant: EPISTAR CORPORATIONInventors: Chia-Ming Chuang, Yu-Heng Shao, Liang-Sheng Chi, Yu-Chieh Huang, Tai-Chan Huo