Abstract: A method for forming a thin film solar cell that includes one or more moisture barrier layer made of a water-insoluble material for protection against water and oxygen damage to the top electrode layer material is disclosed.

Abstract: A method for forming a thin film solar cell that includes one or more moisture barrier layer made of a water-insoluble material for protection against water and oxygen damage to the top electrode layer material is disclosed.

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract: Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract: A thin film photovoltaic cell and method for forming the same. The thin film photovoltaic cell includes a first electrode layer formed on a substrate. An absorber layer of a first dopant-type is formed on the first electrode layer. The absorber layer has an opening extending partially into the absorber layer from a top surface of the absorber layer. The opening has side walls and a bottom surface. A buffer layer of a second dopant type is formed on the top surface of the absorber layer, the side walls of the opening and the bottom surface of the opening A second electrode layer is formed on the buffer layer.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, semiconductor light absorbing layer, top electrode layer, and a protective moisture barrier layer. In some embodiments, the barrier layer is formed of a water-insoluble material. The barrier layer helps protect the top electrode layer from exposure and damage caused by water and oxygen.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, a light absorbing semiconductor layer, and top electrode layer. The absorber layer includes a p-type interior region and an n-type exterior region formed around the perimeter of the layer from a modified native portion of the p-type interior region, thereby forming an active n-p junction that is an intrinsic part of the absorber layer. The top electrode layer is electrically connected to the bottom electrode layer via a scribe line formed in the absorber layer that defines sidewalls. The n-type exterior region of the absorber layer extends along both the horizontal top of the absorber layer, and onto the vertical sidewalls of the scribe line to increase the area of available n-p junction in the solar cell thereby improving solar conversion efficiency.

Abstract: A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.

Abstract: Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.