Abstract: Methods and systems for evaluating and enhancing a neural network model include constructing a surrogate model that corresponds to a target neural network model, based on a degree of knowledge about the target neural network model. Adversarial attacks against the surrogate model are generated, based on an attack goal, a level of attacker capability, and an attack model. The target neural network model is tested for accuracy under the generated adversarial attacks to determine a degree of robustness of the target neural network. Robustness of the target neural network model is enhanced by replacing facial occlusions in input images before applying the input images to the target neural network.

Abstract: Methods and systems for enhancing a neural network include detecting an occlusion in an input image using a trained occlusion detection neural network. The detected occlusion is replaced in the input image with a neutral occlusion to prevent the detected occlusion from frustrating facial recognition to generate a modified input image. Facial recognition is performed on the modified input image using a trained facial recognition neural network.

Abstract: An image classification system defends against physically realizable attacks. A training dataset of input images is retrieved and an adversarial image is generated based on one of the input images that is selected. The adversarial image is created by occluding a portion of the selected image by superimposing a predetermined shape (e.g., a rectangle) containing noise on the selected image. A defense against occlusion attacks (DOA) classifier is trained using the training dataset and the adversarial image. The DOA classifier is utilized to classify captured images of items (e.g., street signs) that may have been attacked (e.g., sticker placement, vandalism).

Abstract: Increased viral particle maturation and production can be achieved in various methods for producing viral particles from viral proteins, in general, by inhibiting or preventing Heme Oxygenase 2 (HO-2) from binding to the group-specific antigen (Gag) of the viral proteins, thus allowing delivery of the viral proteins to plasma membranes where they can replicate and mature without interference from HO-2. The increase in viral particle maturation and production can also be achieved by minimizing or eliminating the presence of HO-2 to thus reduce or prevent binding of HO-2 to the group-specific antigen (Gag) of the viral proteins. The invention is particularly applicable to the production of lentiviruses from viral proteins wherein the Matrix domain (MA) of the Gag is myristoylated.

Abstract: An LDMOS transistor and a method for manufacturing the same are provided. The method includes: forming an epitaxial layer on a substrate, forming a gate structure on an upper surface of the epitaxial layer, forming a body region and a drift region in the epitaxial layer, forming a source region in the body region, forming a first insulating layer on the gate structure and an upper surface of the epitaxial layer and, forming a shield conductor layer on the first insulating layer, forming a second insulating layer covering the shield conductor layer, forming a first conductive path, to connect the source region with the substrate, and forming a drain region in the drift region. By forming the first conductive path which connects the source region with the substrate, the size of the LDMOS transistor and the resistance can be reduced.

Abstract: Increased viral particle maturation and production can be achieved in various methods for producing viral particles from viral proteins, in general, by inhibiting or preventing Heme Oxygenase 2 (HO-2) from binding to the group-specific antigen (Gag) of the viral proteins, thus allowing delivery of the viral proteins to plasma membranes where they can replicate and mature without interference from HO-2. The increase in viral particle maturation and production can also be achieved by minimizing or eliminating the presence of HO-2 to thus reduce or prevent binding of HO-2 to the group-specific antigen (Gag) of the viral proteins. The invention is particularly applicable to the production of lentiviruses from viral proteins wherein the Matrix domain (MA) of the Gag is myristoylated.

Abstract: The present disclosure relates to a trench MOSFET and a method for fabricating the same. The method comprises: providing a substrate with an epitaxy layer; forming a trench in the epitaxy layer; forming a first insulating layer, a first gate, a second insulating layer, and a second gate successively in the trench by deposition and etching; forming a well and a source region at both sides of the trench by ion implantation, and forming a trench-type contact and a metal plug. By forming the first gate and the second gate which are separated from each other, the first insulating layer between a lower portion of the first gate and the epitaxy layer has a thickness larger than that of the second insulating layer between the second gate and the well and the source region. The two separate gates are connected with each other by the metal plug. The resultant MOSFET has an increased breakdown voltage and stable performance while its manufacturer cost is lowered because the manufacturer process is simplified.

Abstract: Disclosed herein are methods for forming polysilicon in a trench. The sacrificial layer having a high etching rate is applied on the surface of polysilicon after polysilicon is formed on the surface of the substrate and in the trench. The sacrificial layer can provide a flat surface. With the sacrificial layer as a sacrificial mask layer, polysilicon can be etched as having a flat surface. The present disclosure avoids using the CMP process, simplifies the manufacturing process, and reduces the production cost. Moreover, the oxide layer formed thereafter can meet the requirement of current applications.

Abstract: The present disclosure relates to a trench MOSFET and a method for fabricating the same. The method comprises: providing a substrate with an epitaxy layer; forming a trench in the epitaxy layer; forming a first insulating layer, a first gate, a second insulating layer, and a second gate successively in the trench by deposition and etching; forming a well and a source region at both sides of the trench by ion implantation, and forming a trench-type contact and a metal plug. By forming the first gate and the second gate which are separated from each other, the first insulating layer between a lower portion of the first gate and the epitaxy layer has a thickness larger than that of the second insulating layer between the second gate and the well and the source region. The two separate gates are connected with each other by the metal plug. The resultant MOSFET has an increased breakdown voltage and stable performance while its manufacturer cost is lowered because the manufacturer process is simplified.

Abstract: Disclosed herein are methods for forming polysilicon in a trench. The sacrificial layer having a high etching rate is applied on the surface of polysilicon after polysilicon is formed on the surface of the substrate and in the trench. The sacrificial layer can provide a flat surface. With the sacrificial layer as a sacrificial mask layer, polysilicon can be etched as having a flat surface. The present disclosure avoids using the CMP process, simplifies the manufacturing process, and reduces the production cost. Moreover, the oxide layer formed thereafter can meet the requirement of current applications.

Abstract: In one embodiment, a method of making a trench for a semiconductor device can include: (i) providing a semiconductor substrate; (ii) forming a patterned hard mask layer with an opening on the semiconductor substrate, where a thickness of the patterned hard mask layer is from about 100 nm to about 400 nm; and (iii) using the patterned hard mask layer as a mask, and etching the semiconductor substrate to form the trench in the semiconductor substrate.

Abstract: A printer is described herein that is equipped to internally remove the backings off of self-adhesive label paper, exposing an adhesive layer when ejected from the printer. A user desiring to print some sort of indicia on the self-adhesive paper need only initiate printing, and a label with exposed adhesive is ejected from the printer. A print side of the paper is split from a backing inside the printer pulling preceding print sides and backings at certain tensions, thereby creating a particularly effective separation angle. A ribbon break shaft and one or more rollers create the correct tension in the print sides, while a platen roller and cantilever leaf spring create the correct tension in the backings. In some embodiments, the optimal separation angle lies between 19 and 25 degrees.

Abstract: The invention is related to various methods for inhibiting or reducing biofilm formation, treating a biofilm production-related disorder, preventing biofilm formation, and screening for neuraminidase inhibitors.

Abstract: The present invention provides compositions and crystals of the carboxyltransferase (CT) domain (the C-terminal ˜90 kDa fragment) of various acetyl-CoA carboxylase (ACC) proteins, including yeast, mouse and human ACCs. Further, the present invention provides methods for identifying and designing compounds that can modulate ACC activity. These methods are based, in part, on the X-ray crystallographic structures of the CT domain of yeast ACC, either alone or bound to acetyl-CoA or a CT inhibitor, such as haloxyfop or diclofop or CP-640186. Thus, the present invention relates to the crystal structures of the carboxyltransferase (“CT”) domain of acetyl-CoA carboxylase (“ACC”), and to the use of these structures in the design of anti-obesity compounds, anti-diabetes compounds, antibiotic compounds, herbicide compounds, and in the design of herbicide resistant plants.

Abstract: A crystal comprising a biotin carboxylase domain of acetyl-CoA carboxylase is described, along with a computer-based method for identifying compounds that modulates activity of acetyl-CoA carboxylase, a computer-based method for rationally designing a compound that modulates activity of acetyl-CoA carboxylase, along with compounds produced by such methods, as well as compositions and methods of use thereof.

Abstract: The invention is related to various methods for inhibiting or reducing biofilm formation, treating a biofilm production-related disorder, preventing biofilm formation, and screening for neuraminidase inhibitors. The invention also encompasses a mutant bacterial strain with a deleted neuraminidase gene.

Abstract: Crystals of nicotinamide phosphoribosyltransferase, methods of making the crystals, and methods of using the crystals are disclosed. The three-dimensional structures of NMPRTases are also disclosed. Also disclosed are methods for utilizing a crystal structure of an NMPRTase for identifying, designing, selecting, or testing molecules which affect NMPRTase activity, which can be used therapeutically in the treatment of diseases and disorders such as cancer and diabetes.

Abstract: The present invention relates to structural models of carnitine acyltransferases, and, in particular, to models of the reactive sites of these enzymes. It is based, at least in part, on the X-ray crystallographic structures of murine carnitine acetyltransferase (“mCRAT”), both in pure form and in complex with its substrates carnitine and coenzyme A (“CoA”). The structural information provides a basis for designing modulators of the activity of CRAT and related enzymes.

Abstract: The present invention provides compositions and crystals of the carboxyltransferase (CT) domain (the C-terminal ˜90 kDa fragment) of various acetyl-CoA carboxylase (ACC) proteins, including yeast, mouse and human ACCs. Further, the present invention provides methods for identifying and designing compounds that can modulate ACC activity. These methods are based, in part, on the X-ray crystallographic structures of the CT domain of yeast ACC, either alone or bound to acetyl-CoA or a CT inhibitor, such as haloxyfop or diclofop or CP-640186. Thus, the present invention relates to the crystal structures of the carboxyltransferase (“CT”) domain of acetyl-CoA carboxylase (“ACC”), and to the use of these structures in the design of anti-obesity compounds, anti-diabetes compounds, antibiotic compounds, herbicide compounds, and in the design of herbicide resistant plants.