Patents by Inventor Liang-Tung Tony Chang

Liang-Tung Tony Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming single sin layer as passivation film
    Patent number: 5788767
    Abstract: The present invention is a method for using a single SiN layer as a passivation film. The single layer SiN can be strengthened to withstand stress by adjusting the process parameters during formation of the SiN layer. In general, the process can be changed by increasing the low frequency power 5% during the deposition. Alternatively, the pressure of the SiN deposition may be decreased about 20% in pressure.
    Type: Grant
    Filed: December 31, 1996
    Date of Patent: August 4, 1998
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Jun-Cheng Ko, Liang-Tung Tony Chang