Abstract: A light emitting diode structure including a substrate, a first type doped semiconductor layer, an insulating layer, light emitting layers, a second type doped semiconductor layer, a first pad and a second pad is provided. The first type doped semiconductor layer is disposed on the substrate. The insulating layer having openings is disposed on the first type doped semiconductor layer for exposing a part of the first type doped semiconductor layer. The light emitting layers are disposed within the corresponding openings of the insulating layer respectively. The second type doped semiconductor layer is disposed on the insulating layer and the light emitting layers. The first pad is disposed on the first type doped semiconductor layer and is electrically connected thereto. The second pad is disposed on the second type doped semiconductor layer and is electrically connected thereto. Besides, air gaps may also be utilized for separating the light emitting layers.

Abstract: A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer and a roughened contact layer on top of the masking buffer layer. The masking buffer layer contains randomly distributed clusters made of a group-IV nitride SixNy (x,y?1), a group-II nitride MgwNz (w,z?1), or a group-III nitride AlsIntGa1?s?tN (0?s,t<1, s+t?1) heavily doped with at least a group-II and group-IV element such as Mg and Si. The roughened contact layer, made of AluInvGa1?u?vN (0?u,v<1, u+v?1), starts from the top surface of an underlying second contact layer not covered by the masking buffer layer's clusters, and then grows upward until it passes (but does not cover) the clusters of the masking buffer layer for an appropriate distance.

Abstract: A door and window ornamental article positioning device includes a support unit equipped with stop plates and a support mount to be mounted to a central hollow-out portion of a fan-shaped blind body having a counterweight board fixedly attached to the underside of both end sides respectively. The stop plates and the support mount are respectively provided with connecting portions and coupling cavities to be joined to each other with a restricting space formed for the positioning of the fan-shaped blind body therein. The support mount has an arcutate support portion precisely abutting against the hollow-out portion, and wing panels with insert hooks extending at both external sides to engage with insert pieces of the counterweight boards. Via the separate design, the support unit can have a proper support mount assembled thereto to fit to various diameters of the fan-shaped blind body and stably position the central hollow-out portion thereby.

Abstract: A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.

Abstract: A fabricating method of an active component array substrate is provided. A substrate is provided and scan lines, data lines, active components, common lines, a first dielectric layer, and a second dielectric layer are formed. Each of the active components is controlled by the scan line and the data line. The first dielectric layer extends from each active component to above pixel regions and the second dielectric layer covers the substrate. A half tone mask is used to remove a part of the second dielectric layer, such that contact windows are formed and a recess is formed above the common line on a part of each pixel region. A pixel electrode is formed above each of the pixel regions and coupled to the common lines to form a storage capacitor.

Abstract: An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided herein. The epitaxial structure has an additional anti-ESD thin layer as the topmost layer, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). The anti-ESD thin layer could also have a superlattice structure formed by interleaving at least an undoped InGaN thin layer and at least a low-band-gap, undoped AlInGaN thin layer. This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.

Abstract: A measuring system for determining the electromechanical coupling characteristics of a piezoceramic (PZT) vibrator, which apply photo-interrupters matrix, glass tube, and metal ball to measure the bouncing motion, wherein the system includes an elastic-bouncing tester, a height measuring circuit, an instantaneous height indicator, a microprocessor, a monitor, and a driving circuit. There is a metal ball in the elastic-bouncing tester. By measuring the bouncing height and flying time, it can determine the electromechanical coupling characteristics of a PZT vibrator or the hardness of other rigid objects.

Abstract: A socket device is installed on a circuit board of an electronic product and includes an insulating housing formed with a contained space for containing an electronic component, a plurality of terminals installed in the contained space, and a holding casing covered around the insulating housing. The insulating housing has at least one horizontal penetrating groove formed at two sides thereof. The terminals are electrically connected with the electronic component. The holding casing forms at least one elastic arm at its two sides, respectively. Each elastic arm forms a pressing portion from a top edge thereof to the contained space for pressing the electrical component, and a guiding portion transversely extended from a free end thereof to the contained space. Each guiding portion is slidably contained in the penetrating groove. Therefore, it can prevent the elastic arm twisted outwardly and the socket device from deforming during the assembly process.

Abstract: A socket device is installed on a circuit board of an electronic product and includes an insulating housing formed with a contained space for containing an electronic component, a plurality of terminals installed in the contained space, and a holding casing covered around the insulating housing. The insulating housing has at least one horizontal penetrating groove formed at two sides thereof. The terminals are electrically connected with the electronic component. The holding casing forms at least one elastic arm at its two sides, respectively. Each elastic arm forms a pressing portion from a top edge thereof to the contained space for pressing the electrical component, and a guiding portion transversely extended from a free end thereof to the contained space. Each guiding portion is slidably contained in the penetrating groove. Therefore, it can prevent the elastic arm twisted outwardly and the socket device from deforming during the assembly process.

Abstract: A MQW LED structure is provided herein, which contains a carrier supply layer joined to a side of the MQW light emitting layer to provide additional carriers for recombination and to avoid/reduce the use of impurity in the light emitting layer. The carrier supply layer contains multiple and interleaving well layers and barrier layers, each having a thickness of 5˜300 ?, with a total thickness of 1˜500 nm. The well layers and the barrier layers are both made of AlpInqGa1-p-qN (p, q?0, 0?p+q?1) compound semiconductor doped with Si or Ge, but with different compositions and with the barrier layers having a higher bandgap than that of the well layers. The carrier supply layer has an electron concentration of 1×1017˜5×1021/cm3.

Abstract: A light-emitting diode structure with transparent window covering layer of multiple films discloses at least a first transparent covering layer and a second covering layer, which are covered with the outside of the light-emitting diode chip. The light-emitting diode chip can emit more than two kinds of light waves to increase the transmission of the different wavelengths and the taking out efficiency of the light-emitting diode. Furthermore, the first transparent covering layer and the second covering layer are deposited each other on the outside of the light-emitting diode chip. The surface of the light-emitting diode with the covering layers is smooth. The contacting parts of the first transparent covering and the second covering layer have strong adhesive force and the contacting parts of the covering layer and light-emitting diode chip also have strong adhesive force.

Abstract: A measuring system for determining the electromechanical coupling characteristics of a piezoceramic (PZT) vibrator, which apply photo-interrupters matrix, glass tube, and metal ball to measure the bouncing motion, wherein the system includes an elastic-bouncing tester, a height measuring circuit, an instantaneous height indicator, a microprocessor, a monitor, and a driving circuit. There is a metal ball in the elastic-bouncing tester. By measuring the bouncing height and flying time, it can determine the electromechanical coupling characteristics of a PZT vibrator or the hardness of other rigid objects.

Abstract: A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped AlxGa1-xN based material layer (0?x<1) and at least a tunneling junction layer is provided. The first type doped semiconductor layer is disposed on the substrate, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The Indium-doped AlxGa1-xN based material layer is disposed on at least one surface of the light emitting layer, and the tunneling junction layer is disposed between the Indium-doped AlxGa1-xN based material layer and the first type doped semiconductor layer and/or disposed between the Indium-doped AlxGa1-xN based material layer and the second type doped semiconductor layer, wherein the Indium-doped AlxGa1-xN based material layer and the tunneling junction layer are disposed on the same side of the light emitting layer.

Abstract: A light emitting diode including a substrate, a semiconductor stacking layer, a first electrode and a second electrode is provided. The semiconductor stacking layer including an n-type doped semiconductor layer, a p-type doped semiconductor layer and an active layer is disposed on the substrate. The n-type doped semiconductor layer has In dopant. The active layer is disposed between the n-type doped semiconductor layer and the p-type doped semiconductor layer. In addition, the first electrode is disposed on the n-type doped semiconductor layer while the second electrode is disposed on the p-type doped semiconductor layer. In the light emitting diode mentioned above, no crack, open or pin hole are found in the n-type doped semiconductor layer, thus the light emitting diode mentioned above has lower power consumption, higher manufacturing yield and better reliability.

Abstract: A multiple layered buffer structure for nitride based semiconductor device is provided herein. The buffer structure contains a first layer of AlxInyGa1-x-yN grown under a high temperature, and a second layer of an un-doped or appropriately doped GaN based material grown under a low temperature The GaN based material of the second layer could be doped with Al, or In, or codoped with one of following sets of elements: Al/In, Si/In, Si/Al, Mg/In, Mg/Al, Si/Al/In, and Mg/Al/In. In another embodiment, the buffer structure contains a GaN seed layer, an AlInN thin layer, a GaN based main layer, and a GaN based thin layer. The GaN seed layer is grown under a high temperature while the other layers are grown under a low temperature.

Abstract: A LED chip includes a substrate, a semiconductor layer, a micro-rough layer, a first electrode and a second electrode. The semiconductor layer is disposed on the substrate, the micro-rough layer is disposed in the semiconductor layer, or between the semiconductor layer and the substrate, or on an upper surface of the semiconductor layer. Both the first electrode and the second electrode are disposed on the semiconductor layer. The first electrode is electrically insulated from the second electrode. In this way, the above-described LED chip has better luminous efficiency.

Abstract: A light-emitting diode chip (LED chip) including a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode is provided. The electrostatic conducting layer is disposed on the substrate, while the first type doped semiconductor layer is disposed on a partial area of the electrostatic conducting layer. Besides, the active layer is disposed on a partial area of the first type doped semiconductor layer, while the second type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is disposed on the first type doped semiconductor layer, while the second electrode is disposed on the second type doped semiconductor layer. The LED chip of the present invention has an electrostatic conducting layer, which protects the LED from electrostatic discharge damage (ESD damage).

Abstract: A light emitting diode (LED) element includes a substrate, a first light emitting unit, a second light emitting unit, a first electrode couple and a second electrode couple. The first light emitting unit is disposed on the substrate. The second light emitting unit is disposed on the first light emitting unit. The first electrode couple is disposed on and electrically connected with the first light emitting unit. The second electrode couple is disposed on and electrically connected with the second light emitting unit. The LED element is adapted for being driven by an alternate current for having the first light emitting unit and the second light emitting unit alternately emitting lights, thus obtaining a white light with a proper color temperature.

Abstract: A method of correcting bonding misalignment between flat display panel and driver IC is provided. First, the contact pads of the bonding flat display panel and the bumps of the driver IC are bonded, wherein the flat display panel further includes a plurality of alignment marks around each contact pad. A bonding misalignment variation between the flat display panel and the driver IC may be identified by matching the position of the alignment mark and the position of the corresponding bump. Thereafter, a correction may be performed according to the bonding misalignment variation.

Abstract: A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the p-type contact layer within the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure made of either SiN and undoped indium-gallium-nitride (InGaN), or SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided. The GaN-based LEDs according to the invention therefore have superior external quantum efficiency and lighting efficiency.