Patents by Inventor Liang Ying Zeng

Liang Ying Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Removing metal fills in a wiring layer
    Patent number: 9087880
    Abstract: The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: July 21, 2015
    Assignee: International Business Machines Corporation
    Inventors: DaSheng Fang, Yuan Quan, Xiaoxia Wang, Liang Ying Zeng, Jingyang Zhang
  • REMOVING METAL FILLS IN A WIRING LAYER
    Publication number: 20150035153
    Abstract: The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated.
    Type: Application
    Filed: July 11, 2014
    Publication date: February 5, 2015
    Inventors: DaSheng Fang, Yuan Quan, Xiaoxia Wang, Liang Ying Zeng, Jingyang Zhang