Abstract: The present disclosure provides a near-infrared absorbing filter, including an absorbing type infrared filtering medium having opposite first and second surfaces; an organic coating layer formed on the first surface of the absorbing type filtering medium for absorbing infrared rays; a first multi-layered film structure formed on the organic coating layer with the organic coating layer disposed between the first multi-layered film structure and the absorbing type infrared filtering medium; and a second multi-layered film structure formed on the second surface of the absorbing type infrared filtering medium. The near-infrared filter of the present disclosure is able to reduce the wavelength difference of T50 and T20 of the incident light within the range of from 0 to 30 degrees to less than 5 nm, thereby reducing chromatic aberration effectively and reducing ghost images of infrared reflections. The disclosure further provides an image sensor including the near-infrared absorbing filter.

Abstract: A FinFET includes a fin structure, a gate, a source-drain region and an inter layer dielectric (ILD). The gate crosses over the fin structure. The source-drain region is in the fin structure. The ILD is laterally adjacent to the gate and includes a dopant, in which a dopant concentration of the ILD adjacent to the gate is lower than a dopant concentration of the ILD away from the gate.

Abstract: The present disclosure provides a near-infrared absorbing filter, including an absorbing type infrared filtering medium having opposite first and second surfaces; an organic coating layer formed on the first surface of the absorbing type filtering medium for absorbing infrared rays; a first multi-layered film structure formed on the organic coating layer with the organic coating layer disposed between the first multi-layered film structure and the absorbing type infrared filtering medium; and a second multi-layered film structure formed on the second surface of the absorbing type infrared filtering medium. The near-infrared filter of the present disclosure is able to reduce the wavelength difference of T50 and T20 of the incident light within the range of from 0 to 30 degrees to less than 5 nm, thereby reducing chromatic aberration effectively and reducing ghost images of infrared reflections. The disclosure further provides an image sensor including the near-infrared absorbing filter.

Abstract: A FinFET includes a fin structure, a gate, a source-drain region and an inter layer dielectric (ILD). The gate crosses over the fin structure. The source-drain region is in the fin structure. The ILD is laterally adjacent to the gate and includes a dopant, in which a dopant concentration of the ILD adjacent to the gate is lower than a dopant concentration of the ILD away from the gate.

Abstract: A method of forming a gate includes: forming a dummy gate; forming an inter layer dielectric (ILD) laterally adjacent to the dummy gate; doping a dopant into the dummy gate and the ILD, in which a surface dopant concentration of the dummy gate is lower than a surface dopant concentration of the ILD; removing the dummy gate to form a cavity after doping the dopant into the dummy gate and the ILD; and forming the gate in the cavity.

Abstract: A mobile apparatus, a base station, a direct communication system and a power control method thereof are provided. The direct communication system includes the mobile apparatus and the base station. The base station transmits a power measurement request message to the mobile apparatus. The mobile apparatus determines a power adjustment reference between the mobile apparatus and another mobile apparatus according to the power measurement request message. One of the mobile apparatus and the base station generates a power adjustment request message according to the power adjustment reference. The mobile apparatus adjusts a communication power with the another mobile apparatus according to the power adjustment request message.