Abstract: A portable keyboard assembly and an electronic device are provided. The portable keyboard assembly includes a keyboard body, a handle, and a docking station. The keyboard body includes a first side and a second side that are opposite to each other. The handle is integrally formed at the first side. The handle includes a gripping portion, and a thickness of any part of the gripping portion is greater than a thickness of the keyboard body. The docking station is pivotally connected to the keyboard body. The docking station has a slot. The electronic device includes the portable keyboard assembly and a display device. The display device is detachably inserted into the slot.

Abstract: An autonomous cleaning device and a noise reduction air duct device are provided for autonomous cleaning device. The autonomous cleaning device includes a body and a motor arranged on the body, and the noise reduction air duct device is mounted on the body. The noise reduction air duct device includes an upper housing, a lower housing and a support noise reduction structure made of elastic material. The lower housing and the upper housing enclose to form an air duct, an air inlet is arranged at a position of the air duct corresponding to the motor, and an air outlet is arranged on a side of the air duct away from the air inlet; the support noise reduction structure has a first end fixed on the lower housing, and a second end abutting against a lower surface of the upper housing.

Abstract: A method of biasing a substrate includes electrically connecting a silicide structure to a bias voltage supply. The method further includes conducting a bias voltage received by the silicide structure to a silicide extension extending from a main body of the silicide structure, wherein the silicide extension extends between adjacent gate structures of a plurality of first gate structures. The method further includes transferring the bias voltage from the silicide extension into a doped region of a substrate below the adjacent gate structures of the plurality of first gate structures.

Abstract: A casing assembly for accommodating a stylus includes a casing and a button. The casing has an accommodation recess and an opening in communication with each other. The accommodation recess has a first end and a second end opposite to each other on a longitudinal axis thereof, and accommodates the stylus. The opening extends from the first end to the second end. The button includes an operation portion and a pushing portion connected to each other. The operation portion is pivotally disposed at the casing so as to be pivotable between an initial position and a released position. The pushing portion is located in the accommodation recess. When the operation portion is pivoted from the initial position to the released position, the pushing portion in the accommodation recess is moved toward the opening so as to push the stylus out of the accommodation recess.

Abstract: An automatic cleaning apparatus includes: a chassis; a front housing arranged at a front end of the chassis; and a sensing device capable sensing movement of the front housing and sending a signal to a control mainboard of the automatic cleaning apparatus when the front housing touches an obstacle and moves relative to the chassis. The sensing device includes a dust blocking member and a rocker arm that triggers the sensing device to send the signal. The rocker arm has a first end rotatably arranged inside the sensing device, and a second end passing through the dust blocking member and extending out of the sensing device. A front housing reset device is arranged on the chassis and capable of biasing the front housing toward an initial position of the front housing.

Abstract: A semiconductor device includes a first doped region in a substrate, wherein the first doped region has a first dopant type. The semiconductor device further includes a second doped region in the substrate, wherein the second doped region has a second dopant type opposite the first dopant type. The semiconductor device further includes a silicide structure on the substrate, wherein the silicide structure includes a main body and a silicide extension. The semiconductor device further includes a plurality of first gate structures on the substrate, wherein a space between adjacent gate structures of the plurality of first gate structures includes a first area and a second area, the silicide extension extends into the first area, the first doped region is in the substrate below the first area, and the second doped region is in the substrate below the second area.