Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100?x?y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.

Abstract: An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100?x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. The crystallization temperature of the Sb—Te—Ti phase-change memory material is significantly risen, retention is improved, and thermal stability is enhanced; meanwhile, the amorphous state resistance decreases, and the crystalline state resistance increases; and the Sb—Te—Ti phase-change memory material has wide application in phase-change memories.

Abstract: The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being Ax(Sb2Te)1?x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0<x<0.5 The phase-change material provided in the present invention is similar to a usual GeSbTe material, so as to be propitious to implement high-density storage. The material may perform reversible phase-change under an effect of an externally electrically driven nano-second (ns) pulse. A phase-change speed of the W—Sb—Te is 3 times of the GeSbTe material, so as to be propitious to implement the high-speed PCRAM.

Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.

Abstract: The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.

Abstract: The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states.

Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.

Abstract: The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states.