Abstract: A display substrate including a drive-circuit layer and a light-emitting structure layer, a preparation method thereof, and a display device, the light-emitting structure layer includes an anode, a pixel definition layer, an organic light-emitting layer and a cathode, and an auxiliary electrode and an organic light-emitting block, arranged sequentially, the pixel definition layer includes an anode opening exposing the anode and an electrode opening exposing the auxiliary electrode, the organic light-emitting block is separated from the organic light-emitting layer, the auxiliary electrode includes the first, second and third auxiliary electrodes arranged sequentially; the cathode includes a first horizontal lapping part lapping with the first auxiliary electrode and a second sidewall lapping part lapping with the second auxiliary electrode, the thickness of the second sidewall lapping part in the direction parallel to the substrate is greater than that of the first horizontal lapping part in the direction per

Abstract: The present disclosure relates to the technical field of biomedicine, in particular to use of advanced platelet-rich fibrin (A-PRF) in preparing a medicament for the treatment of diabetic foot ulcer. The A-PRF provided by the present disclosure has a loose reticular fibrin structure, can be rich in more platelets and leukocytes, can release a plurality of growth factors and cytokines more persistently, and is more beneficial to tissue regeneration and wound repair. The medicament prepared from the A-PRF shortens the healing period of the diabetic foot ulcer, improves the healing rate, and has an excellent treatment effect and high safety.

Abstract: Provided are a single-sided light-emitting LED chip and a fabrication method thereof. The single-sided light-emitting LED chip includes a highly reflective dielectric film and an LED including a substrate layer, an epitaxial layer, a cathode, and an anode. The LED has a substrate side, that is one surface of the substrate layer, and an electrode side opposite to each other, and the four sidewalls that respectively contacts the substrate side and the electrode side. The epitaxial layer is located on the other surface of the substrate layer; the cathode and the anode are located on a side of the epitaxial layer away from the substrate layer; and the four sidewalls of the LED are covered with the highly reflective dielectric film. The present invention simplifies the packaging process and improves the luminous efficiency of the packaged chip.

Abstract: Provided are a single-sided light-emitting LED chip and a fabrication method thereof. The single-sided light-emitting LED chip includes a highly reflective dielectric film and an LED including a substrate layer, an epitaxial layer, a cathode, and an anode. The LED has a substrate side, that is one surface of the substrate layer, and an electrode side opposite to each other, and the four sidewalls that respectively contacts the substrate side and the electrode side. The epitaxial layer is located on the other surface of the substrate layer; the cathode and the anode are located on a side of the epitaxial layer away from the substrate layer; and the four sidewalls of the LED are covered with the highly reflective dielectric film. The present invention simplifies the packaging process and improves the luminous efficiency of the packaged chip.

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac