Abstract: A display substrate includes a base substrate, a plurality of photosensitive transistor units, a plurality of photosensitive ESD protection units, and at least one common signal line. The base substrate includes a display region, a peripheral region located at a periphery of the display region, and a binding region located at a side of the display region. The plurality of photosensitive transistor units, the plurality of photosensitive ESD protection units and the at least one common signal line are located in the peripheral region. The plurality of photosensitive transistor units is connected with binding pins in the binding region through a plurality of signal lines. At least one photosensitive ESD protection unit is connected with, and located between, at least one signal line and the common signal line.

Abstract: There is provided a detection circuit, a display panel and a detection method. The detection circuit includes: a conversion circuit configured to acquire a photoelectric sensing signal in real time and convert the acquired photoelectric sensing signal into a luminance value; a storage circuit configured to store N luminance values from the conversion circuit on a first input first output basis; a discrimination circuit connected to the storage circuit and configured to determine whether at least two of the N luminance values meet a preset condition; and an output circuit connected to the discrimination circuit and the storage circuit, and configured to output a preset default luminance value in response to the at least two luminance values meeting the preset condition and output at least one of the N luminance values in response to the at least two luminance values not meeting the preset condition.

Abstract: A semiconductor device includes a drift region, a first electrode structure, and a second electrode structure, and the first electrode structure and the second electrode structure are located on a same side of the drift region. The first electrode structure includes a first insulation layer and a first electrode. The first insulation layer is located on a periphery of the first electrode. The second electrode structure includes a second insulation layer and a second electrode. The second insulation layer is located on a periphery of the second electrode. A buffer structure is disposed between the first electrode and the second electrode, and the buffer structure is configured to increase accumulation of carriers in the drift region when the semiconductor device is turned on. The buffer structure is disposed between the first electrode and the second electrode, so that flow of carriers stored in the drift region is buffered.