Patents by Inventor Liang-huan Feng

Liang-huan Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultrathin group II-VI semiconductor layers, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the same, and related methods
    Patent number: 9806212
    Abstract: Disclosed are ultrathin layers of group II-VI semiconductors, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the layers and superlattice structures and related methods. The superlattice structures comprise an ultrathin layer of a first group II-VI semiconductor alternating with an ultrathin layer of at least one additional semiconductor, e.g., a second group II-VI semiconductor, or a group IV semiconductor, or a group III-V semiconductor.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: October 31, 2017
    Assignee: University of Kansas
    Inventors: Judy Z. Wu, Bing Li, Liang-huan Feng
  • ULTRATHIN GROUP II-VI SEMICONDUCTOR LAYERS, GROUP II-VI SEMICONDUCTOR SUPERLATTICE STRUCTURES, PHOTOVOLTAIC DEVICES INCORPORATING THE SAME, AND RELATED METHODS
    Publication number: 20150214403
    Abstract: Disclosed are ultrathin layers of group II-VI semiconductors, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the layers and superlattice structures and related methods. The superlattice structures comprise an ultrathin layer of a first group II-VI semiconductor alternating with an ultrathin layer of at least one additional semiconductor, e.g., a second group II-VI semiconductor, or a group IV semiconductor, or a group III-V semiconductor.
    Type: Application
    Filed: August 9, 2013
    Publication date: July 30, 2015
    Inventors: Judy Z. Wu, Bing Li, Liang-huan Feng