Patents by Inventor Liangzhi Xie

Liangzhi Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210125848
    Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.
    Type: Application
    Filed: January 4, 2021
    Publication date: April 29, 2021
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
  • Patent number: 10910244
    Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: February 2, 2021
    Assignee: ACM Research, Inc.
    Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
  • Publication number: 20200335325
    Abstract: A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time ?1, or comparing the detected power off time with a preset time ?2, or comparing dete
    Type: Application
    Filed: April 6, 2016
    Publication date: October 22, 2020
    Inventors: Jun Wang, Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Xuejun Li
  • Publication number: 20190273003
    Abstract: A method and apparatus for cleaning semiconductor wafer, combining batch cleaning and single wafer cleaning together. The method includes: taking at least two wafers from a cassette in a load port and putting said wafers into a first tank filled with chemical solution; after processing said wafers in the first tank, taking said wafers out of the first tank and keeping said wafers wet; putting said wafers into a second tank filled with liquid; after processing said wafers in the second tank, taking said wafers out of the second tank and keeping said wafers wet; putting one of said wafers on a chuck inside a single wafer cleaning module; rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module and putting said wafer back to the cassette in the load port.
    Type: Application
    Filed: April 8, 2019
    Publication date: September 5, 2019
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
  • Patent number: 10297472
    Abstract: A method and apparatus (100) for cleaning semiconductor wafer are provided, combining batch cleaning and single wafer cleaning together.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: May 21, 2019
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
  • Patent number: 10020208
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: July 10, 2018
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Hui Wang
  • Publication number: 20180151398
    Abstract: A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned. Normally, if f1=f2, then P2 is equal to zero or much less than P1; if P1=P2, then f2 is higher than f1; if the f1<f2, then, P2 can be either equal or less than P1.
    Type: Application
    Filed: May 20, 2015
    Publication date: May 31, 2018
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li
  • Publication number: 20180071795
    Abstract: A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.
    Type: Application
    Filed: November 15, 2017
    Publication date: March 15, 2018
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li, Xi Wang
  • Publication number: 20180071794
    Abstract: A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.
    Type: Application
    Filed: November 15, 2017
    Publication date: March 15, 2018
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Fufa Chen, Fuping Chen, Jian Wang, Xi Wang, Xiaoyan Zhang, Yinuo Jin, Zhaowei Jia, Liangzhi Xie, Jun Wang, Xuejun Li, Xi Wang
  • Publication number: 20170140952
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
    Type: Application
    Filed: January 27, 2017
    Publication date: May 18, 2017
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Hui Wang
  • Patent number: 9633833
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: April 25, 2017
    Assignee: ACM RESEARCH (SHANGHAI) INC.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Yue Ma, Hui Wang
  • Patent number: 9595457
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5?/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: March 14, 2017
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Hui Wang
  • Publication number: 20170032959
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.
    Type: Application
    Filed: September 30, 2016
    Publication date: February 2, 2017
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Yue Ma, Hui Wang
  • Patent number: 9492852
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: November 15, 2016
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Yue Ma, Hui Wang
  • Publication number: 20150332940
    Abstract: A method and apparatus (100) for cleaning semiconductor wafer are provided, combining batch cleaning and single wafer cleaning together.
    Type: Application
    Filed: November 28, 2012
    Publication date: November 19, 2015
    Applicant: ACM Reasearch (Shanghai) Inc.
    Inventors: Hui Wang, Fuping Chen, Liangzhi Xie, Shena Jia, Xi Wang, Xiaoyan Zhang
  • Patent number: 8671961
    Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: March 18, 2014
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Voha Nuch, David Wang, Yue Ma, Fufa Chen, Jian Wang, Yunwen Huang, Liangzhi Xie, Chuan He
  • Publication number: 20140053978
    Abstract: A method and apparatus integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least a portion of the plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
    Type: Application
    Filed: October 31, 2013
    Publication date: February 27, 2014
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Zhaowei Jia, Junping Wu, Liangzhi Xie, Hui Wang
  • Publication number: 20140034094
    Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
    Type: Application
    Filed: October 11, 2013
    Publication date: February 6, 2014
    Applicant: ACM Research (Shanghai) Inc.
    Inventors: Voha Nuch, David Wang, Yue Ma, Fufa Chen, Jian Wang, Yunwen Huang, Liangzhi Xie, Chuan He
  • Patent number: 8598039
    Abstract: This invention relates to a method and apparatus by integrating semiconductor manufacturing processes of stress free electrochemical copper polishing (SFP), removal of the Tantalum oxide or Titanium oxide formed during SFP process and XeF2 gas phase etching barrier layer Ta/TaN or Ti/TiN process. Firstly, at least portion of plated copper film is polished by SFP. Secondly the barrier metal oxide film formed during SFP process is etched away by etchant. Finally, the barrier layer Ta/TaN or Ta/TiN is removed with XeF2 gas phase etching. The apparatus accordingly consists of three sub systems: stress free copper electropolishing system, barrier layer oxide film removal system and barrier layer Ta/TaN or Ti/TiN gas phase etching system.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: December 3, 2013
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Zhaowei Jia, Junping Wu, Liangzhi Xie, Hui Wang
  • Patent number: 8580042
    Abstract: An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: November 12, 2013
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Voha Nuch, David Wang, Yue Ma, Fufa Chen, Jian Wang, Yunwen Huang, Liangzhi Xie, Chuan He