Abstract: A semiconductor device includes a gate structure, a drift region, a source region, a drain region, a first doped region, and a second doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The first doped region is in the drift region and between the drain region and the gate structure. The second doped region is within the drift region. The second doped region forms a P-N junction with the first doped region at a bottom surface of the first doped region.

Abstract: A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

Abstract: A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.

Abstract: A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

Abstract: A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.

Abstract: A semiconductor device includes a substrate, a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is above the substrate. The drift region is in the substrate and under the gate structure. The source region and the drain region are on opposite sides of the gate structure. The drain region is in the drift region, and the source region is outside the drift region. The doped region is in the drift region and between the drain region and the gate structure. The doped region is spaced apart from a bottom surface of the drain region.

Abstract: A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

Abstract: A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.

Abstract: A semiconductor device includes a substrate, a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is above the substrate. The drift region is in the substrate and under the gate structure. The source region and the drain region are on opposite sides of the gate structure. The drain region is in the drift region, and the source region is outside the drift region. The doped region is in the drift region and between the drain region and the gate structure. The doped region is spaced apart from a bottom surface of the drain region.

Abstract: A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.

Abstract: A semiconductor device having a super junction structure includes a substrate, an epitaxial layer of a first conductivity type, a plurality of pillars of a second conductivity type, a plurality of gate trenches, an insulating layer and a plurality of doped wells of the second conductivity type. The epitaxial layer of the first conductivity type is on the substrate. The pillars of the second conductivity type are in the epitaxial layer, in which the second conductivity type is opposite to the first conductivity type. The gate trenches are individually corresponding to and over the pillars. The insulating layer is in the gate trenches. The doped wells of the second conductivity type are in the epitaxial layer, in which each of the doped wells is between two adjacent gate trenches. A method for manufacturing the semiconductor device and a method for manufacturing a super junction structure are also provided.