Abstract: Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between the first test parameter and the second test parameter of the test pattern and the first exposure parameter and the second exposure parameter of the photoresist pattern; processing the first data table according to the first exposure parameter to obtain a second data table; and respectively correcting second test parameters of a plurality of design patterns according to the second data table to obtain corrected design patterns, and manufacturing a mask for exposure by using the corrected design patterns.

Abstract: A Sidwf1 gene of Sesamum indicum, including two exons and an intron, is 1638 bp in total, and has a sequence represented by SEQ ID NO: 1. Also provided is a method for determining the internode length type in sesame samples, the method including: 1) extracting a genomic DNA of a sesame sample; 2) synthesizing three primers including SiSNPdwf1 F1, SiSNPdwf1 F2, and SiSNPdwf1 R; amplifying the Sidwf1 gene or an allele SiDWF1 thereof with the genomic DNA of the sesame sample as a template, with a combination of SiSNPdwf1 F1, SiSNPdwf1 F2, and SiSNPdwf1 R a combination of SiSNPdwf1 F1 and SiSNPdwf1 R, or a combination of SiSNPdwf1 F2 and SiSNPdwf1 R, as primers, thereby yielding a PCR product; and performing electrophoresis on the PCR product or sequencing the PCR product, and determining the phenotype of the sesame sample according to an electrophoresis or sequencing result.

Abstract: A Sidwf1 gene of Sesamum indicum, including two exons and an intron, is 1638 bp in total, and has a sequence represented by SEQ ID NO: 1. Also provided is a method for determining the internode length type in sesame samples, the method including: 1) extracting a genomic DNA of a sesame sample; 2) synthesizing three primers including SiSNPdwf1 F1, SiSNPdwf1 F2, and SiSNPdwf1 R; amplifying the Sidwf1 gene or an allele SiDWF1 thereof with the genomic DNA of the sesame sample as a template, with a combination of SiSNPdwf1 F1, SiSNPdwf1 F2, and SiSNPdwf1 R a combination of SiSNPdwf1 F1 and SiSNPdwf1 R, or a combination of SiSNPdwf1 F2 and SiSNPdwf1 R, as primers, thereby yielding a PCR product; and performing electrophoresis on the PCR product or sequencing the PCR product, and determining the phenotype of the sesame sample according to an electrophoresis or sequencing result.

Abstract: A Sidt1 gene controlling a determinate growth habit of sesame, the gene having a length of 1809 bp and including four exons and three introns. The Sidt1 gene is located on the fourth chromosome of sesame and in an 18.0-19.2 cM interval of the eighth linkage group on an SNP genetic map of sesame. The DNA sequence of the Sidt1 gene is represented by SEQ ID NO. 1. A cDNA sequence of the Sidt1 gene has a length of 531 bp and encodes 176 amino acids, and the cDNA sequence is represented by SEQ ID NO. 2. An SNP molecular marker Sidt27-1 of the Sidt1 gene has a length of 92 bp and is located at a base sequence from 378 to 469 of the Sidt1 gene, and a DNA sequence of the SNP molecular marker Sidt27-1 is represented by SEQ ID NO. 3.

Abstract: A Sidt1 gene controlling a determinate growth habit of sesame, the gene having a length of 1809 bp and including four exons and three introns. The Sidt1 gene is located on the fourth chromosome of sesame and in an 18.0-19.2 cM interval of the eighth linkage group on an SNP genetic map of sesame. The DNA sequence of the Sidt1 gene is represented by SEQ ID NO. 1. A cDNA sequence of the Sidt1 gene has a length of 531 bp and encodes 176 amino acids, and the cDNA sequence is represented by SEQ ID NO. 2. An SNP molecular marker Sidt27-1 of the Sidt1 gene has a length of 92 bp and is located at a base sequence from 378 to 469 of the Sidt1 gene, and a DNA sequence of the SNP molecular marker Sidt27-1 is represented by SEQ ID NO. 3.

Abstract: The present invention provides a heat dissipating system for an electric vehicle drive controller. The heat dissipating system for electric vehicle drive controller includes: high power MOS transistors for controlling magnitude of power supplied to an electric vehicle drive motor and for switching current direction, and a radiator connected to bodies of the MOS transistors, the radiator being made of aluminum alloy material, and a surface of the radiator being plated with a metallic nickel layer. Compared with existing electric vehicle drive controller, the electric vehicle drive controller of the present invention has advantages of low operating temperature, high reliability and long service life.

Abstract: The present invention provides a heat dissipating system for an electric vehicle drive controller. The heat dissipating system for electric vehicle drive controller includes: high power MOS transistors for controlling magnitude of power supplied to an electric vehicle drive motor and for switching current direction, and a radiator connected to bodies of the MOS transistors, the radiator being made of aluminum alloy material, and a surface of the radiator being plated with a metallic nickel layer. Compared with existing electric vehicle drive controller, the electric vehicle drive controller of the present invention has advantages of low operating temperature, high reliability and long service life.