Abstract: A thin-film transistor (TFT) panel and a test method are disclosed. The TFT panel includes: m×n bonding pads, where m and n are both natural numbers greater than or equal to 1, and the m×n bonding pads are arranged correspondingly to and electrically connected to TFT units in a TFT active area; a TFT test area including m drive pads, n test pads, and m×n TFT devices, where the m×n TFT devices are divided into n groups, each of which includes m TFT devices. the m TFT devices in each group corresponding to and are electrically connected to the m drive pads and m bonding pads respectively, and the m TFT devices in each group are electrically connected to a same test pad of the n test pads. The m×n bonding pads that were originally bonded by pressure once are tested in m sessions.

Abstract: A photoelectric detection structure and a preparation method, the structure comprises a first scintillator layer used for absorbing low-energy X rays and converting the X rays into visible light; a second scintillator layer used for absorbing high-energy X rays and converting the X rays into visible light; and a first visible light sensor located between the first scintillator layer and the second scintillator layer and used for converting visible light penetrating through the first scintillator layer and visible light reflected by the second scintillator layer into charges and storing the charges into the first visible light sensor. The method comprises providing a substrate, preparing layers layer by layer on the substrate through a semiconductor manufacturing process to form a first visible light sensor, forming a first scintillator layer on a first surface of the first visible light sensor and then forming a second scintillator layer on a second surface of the first visible light sensor.

Abstract: An ESD protection system includes an ESD leakage bus and an ESD protection circuit having one of its terminals connected to the ESD leakage bus. The ESD protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors. When the ESD protection system is applied to an X-ray flat panel detector, no photocurrent will occur during the use of the X-ray flat panel detector, the effect of the photocurrent on the voltage of the scan line is reduced. Further, when the first shading layer is connected to a negative fixed potential, it can be ensured that the ESD protection circuit has small threshold voltage while the leakage current in the ESD protection circuit is reduced, and power consumption is reduced.

Abstract: An ESD protection system includes an ESD leakage bus and an ESD protection circuit having one of its terminals connected to the ESD leakage bus. The ESD protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors. When the ESD protection system is applied to an X-ray flat panel detector, no photocurrent will occur during the use of the X-ray flat panel detector, the effect of the photocurrent on the voltage of the scan line is reduced. Further, when the first shading layer is connected to a negative fixed potential, it can be ensured that the ESD protection circuit has small threshold voltage while the leakage current in the ESD protection circuit is reduced, and power consumption is reduced.