Abstract: The present application provides a high-power semiconductor light-emitting chip with longitudinal carrier modulation and a manufacturing method therefor.

Abstract: A multi-active area semiconductor structure and a method for manufacturing same.

Abstract: A high-reliability low-defect semiconductor light-emitting device and a method for manufacturing same. The high-reliability low-defect semiconductor light-emitting device includes: a semiconductor substrate layer; an active layer arranged on the semiconductor substrate layer; a doped semiconductor contact layer arranged on a side of the active layer away from the semiconductor substrate layer, where the doped semiconductor contact layer includes a first area and an edge area surrounding the first area; a protection layer arranged on a side of the edge area of the doped semiconductor contact layer away from the active layer; and a front electrode layer, arranged on a side of the first area away from the active layer, where an upper surface of the front electrode layer in the first area is lower than an upper surface of the protection layer. The semiconductor light-emitting device has both high reliability and reduced process control costs.

Abstract: Provided are an ion air supply module needle net layout method and an ion air supply module. The layout method comprises: step 1, a wind speed test: adjusting a distance between a single discharge needle and a metal net, so that an ion wind speed at the wind speed central point position of the metal net is at the maximum, and measuring a distance value L between a tip of the discharge needle and the metal net; step 2, a projection radius measurement: measuring a wind speed Vr deviating from the wind speed central point position, and when Vr=aVmax, measuring that the distance between a wind speed measurement point and a wind speed central point is r; and step 3, a needle net layout: setting the distance between the tip of the discharge needle and the metal net to be within the range of (0.7-1.3)L, with the distance between tips of two adjacent discharge needles being within the range of (0.7-1.3)r.