Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

Abstract: An integrated circuit with a micro inductor or with a micro transformer with a magnetic core. A process of forming an integrated circuit with a micro inductor with a magnetic core. A process of forming an integrated circuit with a micro transformer with a magnetic core.

Abstract: A method and structure for forming a semiconductor device, for example a device including a wafer chip scale package (WCSP), can include the formation of at least one conductive layer which contacts a bond pad. The at least one conductive layer can be patterned using a first mask, then a passivation layer can be formed over the patterned at least one conductive layer. The passivation layer can be patterned using a second mask to expose the at least one conductive layer, then a conductive layer such as a solder ball, conductive bump, metal-filled paste, or another conductor is formed on the at least one conductive layer. The method can result in a structure which is formed using a reduced number of mask steps.

Abstract: A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.

Abstract: A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.

Abstract: A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.