Patents by Inventor Lichia Yang

Lichia Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a fin field effect transistor and a shallow trench isolation
    Patent number: 9991154
    Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: June 5, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Ken Lin, Jia-Ming Lin, Hsien-Che Teng, Yung-Chou Shih, Kun-Dian She, Lichia Yang, Yun-Wen Chu
  • METHOD FOR FABRICATING A FIN FIELD EFFECT TRANSISTOR AND A SHALLOW TRENCH ISOLATION
    Publication number: 20170250106
    Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 31, 2017
    Inventors: Wei Ken Lin, Jia-Ming Lin, Hsien-Che Teng, Yung-Chou Shih, Kun-Dian She, Lichia Yang, Yun-Wen Chu