Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: An electrostatic discharge circuit includes at least an electrostatic discharge zener diode, an NMOS transistor, and a PMOS transistor. The electrostatic discharge zener diode is used for lowering the breakdown voltage and making the electrical current discharge through it, thereby preventing the circuit device from burning out and greatly enhancing the function of electrostatic discharge protection.