Abstract: An amplifier, communication device and method of amplification are disclosed. An RF signal is amplified by a Doherty power amplifier (DPA). The DPA has a main amplifier with a Class-AB amplifier in parallel with a Class-C amplifier. When the RF signal power is smaller than 6 dB PBO, the Class-AB amplifier provides the main amplifier amplification; when the RF signal is between 6 dB PBO and 0 dB PBO, both the Class-AB and Class-C amplifiers provide the main amplifier amplification.

Abstract: A method for harmonic trapping in a matching network of a power amplifier includes determining primary inductance and secondary inductance of a differential transformer of the matching network, based on a signal operating frequency of the power amplifier. An inductance value for an L-C filter is determined based on the secondary inductance and a harmonic frequency of a local oscillator (LO) signal. A capacitance value for the L-C filter is determined based on the inductance value and the harmonic frequency of the LO signal. The L-C filter is provided on an electric connection between a direct current (DC) bias voltage source and a secondary inductor of the differential transformer. The L-C filter is configured with the determined inductance value and the determined capacitance value.

Abstract: A wireless communication device can include switch circuitry. The switch circuitry can include stacks having a common gate node and a common body node, wherein a stack includes a metal-oxide-semiconductor field-effect transistor (MOSFET) having a body resistive element coupled to a body terminal of the MOSFET and the common body node a gate resistive element coupled to a gate terminal of the MOSFET and the common gate node. The switch circuitry can further include a self-biased MOSFET coupled to the common gate node and the common body node, a gate of the self-biased MOSFET configured to receive direct current (DC) bias with a low pass filter.