Abstract: A tunnel field effect transistor (100) comprises a source region (102), a drain region (104), and a channel region (106) formed of a single material, in particular a half-metal. The channel extends between the source region and the drain region. The channel region (106) and the drain region (104) are smaller than a threshold size in a first dimension. The threshold size is the size required for the material to exhibit sufficient quantum confinement such that a non-zero band gap results and the material becomes a semiconductor. The source region (102) is larger than this threshold size in the first dimension and is thus metallic.

Abstract: A tunnel field effect transistor (100) comprises a source region (102), a drain region (104), and a channel region (106) formed of a single material, in particular a half-metal. The channel extends between the source region and the drain region. The channel region (106) and the drain region (104) are smaller than a threshold size in a first dimension. The threshold size is the size required for the material to exhibit sufficient quantum confinement such that a non-zero band gap results and the material becomes a semiconductor. The source region (102) is larger than this threshold size in the first dimension and is thus metallic.