Patents by Inventor Lidiya Nikolaevna Obolenskaya

Lidiya Nikolaevna Obolenskaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6458206
    Abstract: AFM/STM probes are based on whiskers grown by the vapor-liquid-solid (VLS) mechanism. Silicon cantilevers oriented along the crystallographic plane (111) are prepared from silicon-on-insulator structures that contain a thin layer (111) on a (100) substrate with SiO2 interposed layer. At removal of solidified alloy globules inherent in the growth mechanism sharpening of the whiskers takes place and, in such a way, the probes are formed. Cross-sections of the wiskers grown by the mechanism on the cantilevers can be controllably changed during the growth process so that step-shaped whiskers optimal for fabrication of the probes can be prepared. Also, whiskers with expansions/contractions can be formed that are important for fabrication of probes suitable for investigations in coarse surfaces, complicated cavitites, grooves typical for semiconductor microelectronics, etc.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: October 1, 2002
    Assignee: Crystals and Technologies, Ltd.
    Inventors: Evgeny Invievich Givargizov, Lidiya Nikolaevna Obolenskaya, Ala Nikolaevna Stepanova, Evgeniya Sergeevna Mashkova, Michail Evgenievich Givargizov
  • Patent number: 5825122
    Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode.
    Type: Grant
    Filed: March 26, 1996
    Date of Patent: October 20, 1998
    Inventors: Evgeny Invievich Givargizov, Viktor Vladimirovich Zhirnov, Alla Nikolaevna Stepanova, Lidiya Nikolaevna Obolenskaya