Abstract: The present application provides a semiconductor device, a method for manufacturing a semiconductor device, and an electronic device. Two semiconductor layers having different carrier mobilities are provided, the semiconductor layer having a lower carrier mobility covers the semiconductor layer having a higher carrier mobility, and the semiconductor layer having a higher carrier mobility is located within the coverage area of a first electrode.

Abstract: A thin film transistor and a preparation method thereof, a display panel, and a display device. The thin film transistor includes an active structure and a gate that are stacked and insulated by an interlayer insulating layer, the active structure includes a source region, a drain region, and a channel region, the source region and the drain region are located on two sides of the channel region, and in a thickness direction of the interlayer insulating layer, a projection of the gate overlaps with a projection of the channel region; wherein the channel region includes a metal oxide material, a ratio of a number of indium atoms and a number of zinc atoms in the channel region is a, and a?4.

Abstract: The invention belongs to the technical field of rapid solidification of amorphous alloy and concretely relates to an iron-based amorphous alloy broad ribbon, wherein the width is 220-1000 mm, the thickness is 0.02-0.03 mm, the transversal thickness deviation is smaller than +/?0.002 mm, the lamination factor is larger than 0.84, the saturation magnetic-flux density is larger than 1.5 T, the iron loss is smaller than 0.20 W/kg under the conditions that the frequency is 50 Hz and the maximum magnetic-flux density is 1.3 T, and the exciting power is smaller than 0.50 VA/kg. The invention also relates to a manufacturing method of the broad ribbon, and a single-roll quenching method is adopted, wherein the width of a nozzle slot is 0.4-0.7 mm, the transversal width deviation of the nozzle slot is smaller than +/?0.05 mm, the transversal flatness deviation of a cooling roll (4) is smaller than 0.02 mm, and the surface roughness Ra is smaller than 0.0005 mm.

Abstract: The invention belongs to the technical field of rapid solidification of amorphous alloy and concretely relates to an iron-based amorphous alloy broad ribbon, wherein the width is 220-1000 mm, the thickness is 0.02-0.03 mm, the transversal thickness deviation is smaller than +/?0.002 mm, the lamination factor is larger than 0.84, the saturation magnetic-flux density is larger than 1.5 T, the iron loss is smaller than 0.20 W/kg under the conditions that the frequency is 50 Hz and the maximum magnetic-flux density is 1.3 T, and the exciting power is smaller than 0.50 VA/kg. The invention also relates to a manufacturing method of the broad ribbon, and a single-roll quenching method is adopted, wherein the width of a nozzle slot is 0.4-0.7 mm, the transversal width deviation of the nozzle slot is smaller than +/?0.05 mm, the transversal flatness deviation of a cooling roll (4) is smaller than 0.02 mm, and the surface roughness Ra is smaller than 0.0005 mm.

Abstract: This invention relates to a Fe-Ni based high permeability amorphous alloy consisting of, in atom percent Ni 30-45%, Cr 0.5-1.2%, Si 5-14%, B 5-15%, P 1.0-3.0%, the balance Fe and inevitable impurities. The alloy is made by the rapid quenching melt method. It can be heat-treated in air and the excellent magnetic properties can be obtained as follows: B.sub.10 7900 Gs, B.sub.r 7500 Gs, H.sub.C 0.008 Oe, u.sub.m 68.times.10.sup.4. The present alloy is applied to make various magnetic devices which are used in electric apparatus and equipments.