Patents by Inventor Lie Larry Zhao

Lie Larry Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resist trim process to define small openings in dielectric layers
    Patent number: 7737021
    Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: June 15, 2010
    Assignee: Globalfoundries Inc.
    Inventors: Srikanteswara Dakshina-Murthy, Paul R. Besser, Jonathan B. Smith, Eric M. Apelgren, Christian Zistl, Jeremy I. Martin, Lie Larry Zhao, Nicholas John Kepler
  • Resist trim process to define small openings in dielectric layers
    Patent number: 6500755
    Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
    Type: Grant
    Filed: December 6, 2000
    Date of Patent: December 31, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Srikanteswara Dakshina-Murthy, Paul R. Besser, Jonathan B. Smith, Eric M. Apelgren, Christian Zistl, Jeremy I. Martin, Lie Larry Zhao, Nicholas John Kepler
  • Method of defining small openings in dielectric layers
    Patent number: 6406993
    Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises forming a layer of dielectric material, forming a hard mask layer above the layer of dielectric material, and forming an opening in the hard mask layer. The method further comprises forming a sidewall spacer in the opening in the hard mask layer that defines a reduced opening, forming an opening in the layer of dielectric material below the reduced opening, and forming a conductive interconnection in the opening in the dielectric layer.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: June 18, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Srikanteswara Dakshina-Murthy, Paul R. Besser, Jonathan B. Smith, Eric M. Apelgren, Christian Zistl, Jeremy I. Martin, Lie Larry Zhao, Nicholas J. Kepler
  • Resist trim process to define small openings in dielectric layers
    Publication number: 20020068436
    Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
    Type: Application
    Filed: December 6, 2000
    Publication date: June 6, 2002
    Inventors: Srikanteswara Dakshina-Murthy, Paul R. Besser, Jonathan B Smith, Eric M. Apelgren, Christian Zistl, Jeremy I. Martin, Lie Larry Zhao, Nicholas John Kepler