Patents by Inventor Lieh-Chuan Chen
Lieh-Chuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901433Abstract: A device includes a first III-V compound layer, a second III-V compound layer, a dielectric layer, a contact, a metal-containing layer, and a metal contact. The second III-V compound layer is over the first III-V compound layer. The dielectric layer is over the second III-V compound layer. The contact extends through the dielectric layer to the second III-V compound layer. The contact is in contact with a top surface of the dielectric layer and an inner sidewall of the dielectric layer. The metal-containing layer is over and in contact with the contact, and a portion of the metal-containing layer is directly above the dielectric layer. The metal contact is over and in contact with the metal-containing layer.Type: GrantFiled: August 24, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng You, Hsin-Chih Lin, Kun-Ming Huang, Lieh-Chuan Chen, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
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Publication number: 20230420429Abstract: A semiconductor structure may include an interposer including on-interposer bump structures, at least one semiconductor die bonded to a first subset of the on-interposer bump structures through first solder material portions, at least one spacer die bonded to a second subset of the on-interposer bump structures through second solder material portions, and a molding compound die frame laterally surrounding each of the at least one semiconductor die and the at least one spacer die. Each of the at least one semiconductor die includes a respective set of transistors and a respective set of metal interconnect structures. Each of the at least one spacer die is free from any transistor therein.Type: ApplicationFiled: June 24, 2022Publication date: December 28, 2023Inventors: Sheng-Kai Chang, Leo Li, Chung-Hsien Hun, Lieh-Chuan Chen, Chien-Li Kuo
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Patent number: 11848302Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.Type: GrantFiled: December 13, 2022Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-Yao Yang, Ling-Wei Li, Yu-Jui Wu, Cheng-Lin Huang, Chien-Chen Li, Lieh-Chuan Chen, Che-Jung Chu, Kuo-Chio Liu
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Publication number: 20230113265Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive bump over and electrically connected to the chip. The chip package structure includes a ring-like structure over and electrically insulated from the chip. The ring-like structure surrounds the conductive bump, and the ring-like structure and the conductive bump are made of a same material.Type: ApplicationFiled: December 13, 2022Publication date: April 13, 2023Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
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Patent number: 11545463Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.Type: GrantFiled: August 5, 2021Date of Patent: January 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-Yao Yang, Ling-Wei Li, Yu-Jui Wu, Cheng-Lin Huang, Chien-Chen Li, Lieh-Chuan Chen, Che-Jung Chu, Kuo-Chio Liu
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Publication number: 20220336631Abstract: A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and spaced apart from each other. The gate structure is over the second III-V compound layer and between the source and drain structures. The gate field plate is over the second III-V compound. From a top view the gate field plate forms a strip pattern interposing a stripe pattern of the gate structure and a stripe pattern of the drain structure.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng YOU, Hsin-Chih LIN, Kun-Ming HUANG, Lieh-Chuan CHEN, Po-Tao CHU, Shen-Ping WANG, Chien-Li KUO
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Patent number: 11374107Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, source and drain structures over the second III-V compound layer and spaced apart from each other, a gate structure over the second III-V compound layer and between the source and drain structures, a gate field plate over the second III-V compound layer and between the gate structure and the drain structure, and an etch stop layer over the drain structure and spaced apart from the gate field plate.Type: GrantFiled: June 15, 2020Date of Patent: June 28, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng You, Hsin-Chih Lin, Kun-Ming Huang, Lieh-Chuan Chen, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
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Publication number: 20210384319Abstract: A device includes a first III-V compound layer, a second III-V compound layer, a dielectric layer, a contact, a metal-containing layer, and a metal contact. The second III-V compound layer is over the first III-V compound layer. The dielectric layer is over the second III-V compound layer. The contact extends through the dielectric layer to the second III-V compound layer. The contact is in contact with a top surface of the dielectric layer and an inner sidewall of the dielectric layer. The metal-containing layer is over and in contact with the contact, and a portion of the metal-containing layer is directly above the dielectric layer. The metal contact is over and in contact with the metal-containing layer.Type: ApplicationFiled: August 24, 2021Publication date: December 9, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng YOU, Hsin-Chih LIN, Kun-Ming HUANG, Lieh-Chuan CHEN, Po-Tao CHU, Shen-Ping WANG, Chien-Li KUO
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Publication number: 20210375821Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.Type: ApplicationFiled: August 5, 2021Publication date: December 2, 2021Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
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Patent number: 11088108Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.Type: GrantFiled: June 27, 2019Date of Patent: August 10, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Yao Yang, Ling-Wei Li, Yu-Jui Wu, Cheng-Lin Huang, Chien-Chen Li, Lieh-Chuan Chen, Che-Jung Chu, Kuo-Chio Liu
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Publication number: 20200411467Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.Type: ApplicationFiled: June 27, 2019Publication date: December 31, 2020Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
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Publication number: 20200312983Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, source and drain structures over the second III-V compound layer and spaced apart from each other, a gate structure over the second III-V compound layer and between the source and drain structures, a gate field plate over the second III-V compound layer and between the gate structure and the drain structure, and an etch stop layer over the drain structure and spaced apart from the gate field plate.Type: ApplicationFiled: June 15, 2020Publication date: October 1, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng YOU, Hsin-Chih LIN, Kun-Ming HUANG, Lieh-Chuan CHEN, Po-Tao CHU, Shen-Ping WANG, Chien-Li KUO
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Patent number: 10686054Abstract: A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.Type: GrantFiled: November 19, 2018Date of Patent: June 16, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng You, Hsin-Chih Lin, Kun-Ming Huang, Lieh-Chuan Chen, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
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Publication number: 20190109210Abstract: A semiconductor device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a source contact and a drain contact over the second III-V compound layer, a gate contact over the second III-V compound layer and between the source contact and the drain contact, a gate field plate over the second III-V compound layer, a first etch stop layer over the source contact, and a second etch stop layer over the drain contact and separated from the first etch stop layer.Type: ApplicationFiled: November 19, 2018Publication date: April 11, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng YOU, Hsin-Chih LIN, Kun-Ming HUANG, Lieh-Chuan CHEN, Po-Tao CHU, Shen-Ping WANG, Chien-Li KUO
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Patent number: 10134867Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.Type: GrantFiled: April 6, 2018Date of Patent: November 20, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng You, Hsin-Chih Lin, Kun-Ming Huang, Lieh-Chuan Chen, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
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Publication number: 20180233577Abstract: A method for manufacturing semiconductor device includes depositing a contact metal layer over a III-V compound layer. An anti-reflective coating (ARC) layer is deposited over the contact metal layer, and an etch stop layer is deposited over the ARC layer. The etch stop layer, the ARC layer, and the contact metal layer are etched to form a contact stack over the III-V compound layer. A conductive layer is deposited over the III-V compound layer, and the conductive layer is etched to form a gate field plate. The etch stop layer has an etch selectivity different from that of the conductive layer.Type: ApplicationFiled: April 6, 2018Publication date: August 16, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng YOU, Hsin-Chih LIN, Kun-Ming HUANG, Lieh-Chuan CHEN, Po-Tao CHU, Shen-Ping WANG, Chien-Li KUO
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Patent number: 9985094Abstract: A super junction includes a substrate and an epitaxial layer over the substrate, the epitaxial layer having a first dopant type. The super junction further includes an angled trench in the epitaxial layer, the angled trench having sidewalls disposed at an angle ranging from about 85-degrees to about 89-degrees with respect to a top surface of the epitaxial layer. The super junction further includes a doped body in the epitaxial layer surrounding the angled trench, the doped body having a second dopant type, the second dopant type opposite that of the first dopant type.Type: GrantFiled: December 27, 2013Date of Patent: May 29, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jheng-Sheng You, Che-Yi Lin, Shen-Ping Wang, Lieh-Chuan Chen, Chih-Heng Shen, Po-Tao Chu
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Patent number: 9941384Abstract: A semiconductor device includes a first III-V compound layer on a substrate, a second III-V compound layer on the first III-V compound layer, in which a material of the first III-V compound layer is different from that of the second III-V compound layer, a gate metal stack disposed on the second III-V compound layer, a source contact and a drain contact disposed at opposite sides of the gate metal stack, a gate field plate disposed between the gate metal stack and the drain contact, an anti-reflective coating (ARC) layer formed on the source contact and the drain contact, and an etch stop layer formed on the ARC layer.Type: GrantFiled: August 29, 2015Date of Patent: April 10, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jheng-Sheng You, Hsin-Chih Lin, Kun-Ming Huang, Lieh-Chuan Chen, Po-Tao Chu, Shen-Ping Wang, Chien-Li Kuo
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Patent number: 9748377Abstract: A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.Type: GrantFiled: October 19, 2015Date of Patent: August 29, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Ming Huang, Shen-Ping Wang, Lieh-Chuan Chen, Chih-Heng Shen, Po-Tao Chu
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Patent number: 9698256Abstract: The present disclosure relates to an integrated circuit with a termination region, and an associated method of formation. In some embodiments, the integrated circuit comprises a cell region and a termination region. The termination region is disposed at an outer periphery of the cell region. The cell region comprises an array of device cells. The termination region comprises a plurality of termination rings encompassing the cell region. The plurality of termination rings have different depths.Type: GrantFiled: September 24, 2014Date of Patent: July 4, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jheng-Sheng You, Che-Yi Lin, Shen-Ping Wang, Lieh-Chuan Chen, Po-Tao Chu