Patents by Inventor Lien Yo Tsai

Lien Yo Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7884412
    Abstract: A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: February 8, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shieh Feng Huang, Jiun Nan Chen, Lien Yo Tsai
  • Patent number: 7148098
    Abstract: A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: December 12, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shieh Feng Huang, Jiun Nan Chen, Lien Yo Tsai