Patents by Inventor Liesbeth REIJNEN

Liesbeth REIJNEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program
    Patent number: 11048174
    Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: June 29, 2021
    Assignees: ASML Netherlands B.V., LAM Research Corporation
    Inventors: Michael Kubis, Marinus Jochemsen, Richard Stephen Wise, Nader Shamma, Girish Anant Dixit, Liesbeth Reijnen, Ekaterina Mikhailovna Viatkina, Melisa Luca, Johannes Catharinus Hubertus Mulkens
  • METHOD OF CONTROLLING A PATTERNING PROCESS, LITHOGRAPHIC APPARATUS, METROLOGY APPARATUS LITHOGRAPHIC CELL AND ASSOCIATED COMPUTER PROGRAM
    Publication number: 20200233311
    Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.
    Type: Application
    Filed: February 16, 2017
    Publication date: July 23, 2020
    Inventors: Michael KUBIS, Marinus JOCHEMSEN, Richard Stephen WISE, Nader SHAMMA, Girish Anant DIXIT, Liesbeth REIJNEN, Ekaterina Mikhailovna VIATKINA, Melisa LUCA, Johannes Catharinus Hubertus MULKENS
  • METHOD AND APPARATUS TO MONITOR A PROCESS APPARATUS
    Publication number: 20190214318
    Abstract: A substrate, including a substrate layer; and an etchable layer on the substrate layer, the etchable layer including a patterned region thereon or therein and including a blank region of sufficient size to enable a bulk etch rate of an etch tool for etching the blank region to be determined.
    Type: Application
    Filed: August 14, 2017
    Publication date: July 11, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Mark John MASLOW, Johannes Catharinus Hubertus MULKENS, Peter TEN BERGE, Franciscus VAN DE MAST, Jan-Willem GEMMINK, Liesbeth REIJNEN