Patents by Inventor Liesl Folks
Liesl Folks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8920948Abstract: According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.Type: GrantFiled: December 31, 2011Date of Patent: December 30, 2014Assignee: HGST Netherlands B.V.Inventors: Liesl Folks, Michael K. Grobis, Dan S. Kercher, Ricardo Ruiz, Kentaro Takano, Bruce D. Terris, Qing Zhu
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Publication number: 20130170065Abstract: According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.Type: ApplicationFiled: December 31, 2011Publication date: July 4, 2013Inventors: Liesl Folks, Michael K. Grobis, Dan S. Kercher, Ricardo Ruiz, Kentaro Takano, Bruce D. Terris, Qing Zhu
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Patent number: 8422284Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.Type: GrantFiled: December 8, 2009Date of Patent: April 16, 2013Assignee: HGST Netherlands B.V.Inventors: Liesl Folks, Bruce David Terris
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Patent number: 8199553Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.Type: GrantFiled: December 17, 2009Date of Patent: June 12, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris
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Patent number: 8166633Abstract: A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.Type: GrantFiled: December 17, 2010Date of Patent: May 1, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Thomas Dudley Boone, Jr., Liesl Folks, Bruce Alvin Gurney, Jordan Asher Katine, Ernesto E. Marinero, Neil Smith
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Patent number: 8059373Abstract: Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.Type: GrantFiled: October 16, 2006Date of Patent: November 15, 2011Assignee: Hitachi Global Storage Technologies Netherlands, B.V.Inventors: Liesl Folks, Robert E. Fontana, Jr., Bruce A. Gurney, Klaas B. Klaassen, Stefan Maat
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Patent number: 8035927Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.Type: GrantFiled: January 28, 2008Date of Patent: October 11, 2011Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Thomas Dudley Boone, Jr., Liesl Folks, Robert E. Fontana, Jr., Bruce Alvin Gurney, Jordan Asher Katine, Sergio Nicoletti
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Publication number: 20110149632Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.Type: ApplicationFiled: December 17, 2009Publication date: June 23, 2011Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris
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Publication number: 20110086440Abstract: A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.Type: ApplicationFiled: December 17, 2010Publication date: April 14, 2011Applicant: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Thomas Dudley Boone, JR., Liesl Folks, Bruce Alvin Gurney, Jordan Asher Katine, Ernesto E. Marinero, Neil Smith
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Patent number: 7881020Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.Type: GrantFiled: May 11, 2007Date of Patent: February 1, 2011Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Thomas Dudley Boone, Jr., Liesl Folks, Bruce Alvin Gurney, Jordan Asher Katine, Ernesto E. Marinero, Neil Smith
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Patent number: 7872905Abstract: A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.Type: GrantFiled: October 31, 2008Date of Patent: January 18, 2011Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Sylvia Helena Florez Marino, Liesl Folks, Bruce David Terris
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Publication number: 20100118585Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.Type: ApplicationFiled: December 8, 2009Publication date: May 13, 2010Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.Inventors: Liesl Folks, Bruce David Terris
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Patent number: 7652915Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.Type: GrantFiled: December 19, 2006Date of Patent: January 26, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Liesl Folks, Bruce David Terris
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Publication number: 20090190269Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.Type: ApplicationFiled: January 28, 2008Publication date: July 30, 2009Inventors: Thomas Dudley Boone, JR., Liesl Folks, Robert E. Fontana, JR., Bruce Alvin Gurney, Jordan Asher Katine, Sergio Nicoletti
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Publication number: 20090116310Abstract: A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.Type: ApplicationFiled: October 31, 2008Publication date: May 7, 2009Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS BVInventors: Sylvia Helena Florez Marino, Liesl Folks, Bruce David Terris
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Patent number: 7466521Abstract: An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.Type: GrantFiled: April 25, 2006Date of Patent: December 16, 2008Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Thomas Dudley Boone, Jr., Liesl Folks, Stefan Maat
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Publication number: 20080278860Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.Type: ApplicationFiled: May 11, 2007Publication date: November 13, 2008Inventors: Thomas Dudley Boone, JR., Liesl Folks, Bruce Alvin Gurney, Jordan Asher Katine, Ernesto E. Marinero, Neil Smith
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Publication number: 20080145951Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.Type: ApplicationFiled: December 19, 2006Publication date: June 19, 2008Inventors: Liesl Folks, Bruce David Terris
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Publication number: 20080088982Abstract: Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.Type: ApplicationFiled: October 16, 2006Publication date: April 17, 2008Inventors: Liesl Folks, Robert E. Fontana, Bruce A. Gurney, Klaas B. Klaassen, Stefan Maat
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Publication number: 20070247763Abstract: An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.Type: ApplicationFiled: April 25, 2006Publication date: October 25, 2007Inventors: Thomas Boone, Liesl Folks, Stefan Maat