Patents by Inventor Lieve Vandezande

Lieve Vandezande has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of TiN films in a batch reactor
    Patent number: 7966969
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: June 28, 2011
    Assignee: ASM International N.V.
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus J. De Blank, Radko Gerard Bankras
  • Chemical vapor deposition of TiN films in a batch reactor
    Patent number: 7732350
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: June 8, 2010
    Assignee: ASM International N.V.
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus J. De Blank, Radko Gerard Bankras
  • OZONE AND TEOS PROCESS FOR SILICON OXIDE DEPOSITION
    Publication number: 20090325391
    Abstract: Methods for depositing silicon oxide in a batch reactor are provided. In some embodiments, a plurality of vertically separated substrates is provided in a reaction chamber. Tetraethyl orthosilicate (TEOS) is pulsed into the reaction chamber by direct liquid injection. Ozone is flowed into the reaction chamber simultaneously or alternately with the TEOS. The deposition is performed at about 10 Torr or less to extend the mean free path length of the ozone molecules. According to some embodiments, the deposition allows openings in the substrates to be filled while the occurrence of voids is maintained at a low level.
    Type: Application
    Filed: June 30, 2008
    Publication date: December 31, 2009
    Applicant: ASM INTERNATIONAL NV
    Inventors: Stijn DE VUSSER, Pamela R. Fischer, Lieve Vandezande
  • Deposition of TiN films in a batch reactor
    Publication number: 20070077775
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Application
    Filed: December 4, 2006
    Publication date: April 5, 2007
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus De Blank, Radko Bankras
  • Deposition of TiN films in a batch reactor
    Publication number: 20060060137
    Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Type: Application
    Filed: March 31, 2005
    Publication date: March 23, 2006
    Inventors: Albert Hasper, Gert-Jan Snijders, Lieve Vandezande, Marinus De Blank, Radko Bankras