Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: A method of controlling coupling of at least two quantum dots in a quantum dot array is described, wherein the method comprises: determining virtual gates for the quantum dots based on first crosstalk contributions of physical gates to dot potentials of quantum dots in the quantum dot array, a virtual gate voltage defining a linear combination of physical gate voltages to be applied to the physical gates for controlling at least one dot potential of a quantum dot or for controlling a coupling of at least two quantum dots in the quantum dot array, while at least partially compensating dot potential crosstalk due to the first crosstalk contributions; determining second crosstalk contributions of the virtual gates to a coupling between one or more pairs of quantum dots in the quantum dot array, the determining including determining partial derivatives of couplings between pairs of quantum dots in the quantum dot array with respect to the virtual gate voltages; determining enhanced virtual gates for the quantum d

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot circuit and a method of characterizing such a circuit Voltages that enable control of electron occupation in a series of quantum dots are determined by a method of measuring effects of gate electrode voltages on a quantum dot circuit. The quantum dot circuit comprises a channel (10), first gate electrodes (14a-14e) that extend over locations along the edge of the channel to create potentials barriers defining the potentials well therebetween, as well as second gate electrodes (16a-16d) adjacent to potential wells, for controlling depths of the successive electrical potential wells between the potential barriers. First, channel currents are measured in a pre-scan of bias voltages of the first gates for controlling the potential barriers. The result is used to set their bias levels in, a scan over a two-dimensional range of combinations of bias voltages on the second gates for controlling the depths.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot circuit and a method of characterizing such a circuit Voltages that enable control of electron occupation in a series of quantum dots are determined by a method of measuring effects of gate electrode voltages on a quantum dot circuit. The quantum dot circuit comprises a channel (10), first gate electrodes (14a-14e) that extend over locations along the edge of the channel to create potentials barriers defining the potentials well therebetween, as well as second gate electrodes (16a-16d) adjacent to potential wells, for controlling depths of the successive electrical potential wells between the potential barriers. First, channel currents are measured in a pre-scan of bias voltages of the first gates for controlling the potential barriers. The result is used to set their bias levels in, a scan over a two-dimensional range of combinations of bias voltages on the second gates for controlling the depths.