Patents by Inventor Li-Fang Yang

Li-Fang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HSG PROCESS AND PROCESS OF FABRICATING LARGE-AREA ELECTRODE
    Publication number: 20070059880
    Abstract: A hemispherical silicon grain (HSG) process is described. A doped poly-Si layer is formed on a substrate, and then an oxidative gas is used to oxidize the surface of the doped poly-Si layer to form an oxide layer. An a-Si layer is then formed on the oxide layer, and the a-Si layer is converted into HSG.
    Type: Application
    Filed: September 14, 2005
    Publication date: March 15, 2007
    Inventors: Li-Fang Yang, Kun-Shu Huang, Sheng-Hsiu Peng, Tzung-Hua Ying