Abstract: A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.

Abstract: A reconfigurable optical add and drop multiplexer (ROADM) system is provided. The ROADM system may include a switching system which includes at least one first WSS optically coupled to a tapping coupler and configured to receive an input optical signal from a first circulator, transmit a drop optical signal to a demultiplexer to drop one or more first wavelength channels, and output a through optical signal. The switching system may also include at least one second WSS optically coupled to the at least one first WSS and a multiplexer and configured to receive an add optical signal to add one or more second wavelength channels, receive the through optical signal, and output an output optical signal to a second circulator, and at least one OCM configured to monitor the input optical signal and the output optical signal.

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having a substrate support configured to support a substrate; a shower head having a plurality of gas inlets configured to introduce a gas into respective regions in the plasma processing chamber; a gas supply configured to supply a gas to the plurality of gas inlets; a plasma generator configured to generate a plasma of the gas; and a controller configured to control at least the gas supply. The gas supply includes: a gas unit configured to supply a common gas to the plurality of gas inlets; and an injection unit configured to supply an injection gas to the selected gas inlet among the plurality of gas inlets, and the controller controls the injection unit so that two or more types of injection gases are supplied to two different ones of the plurality of gas inlets.

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.

Abstract: A deposition processing method includes a step of depositing deposits onto a substrate using a first plasma generated in a processing condition of depositing the deposits onto the substrate, which is basically a first processing condition, and a preceding step performed before the step of depositing the deposits onto the substrate, wherein, within the step of depositing the deposits transited from the preceding step, the processing condition is controlled so as to deposit less deposits than that in the first processing condition until a state of the first plasma is stabilized.

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.