Abstract: A substrate processing system comprising: a plasma processing apparatus; a depressurization transfer device having a transfer robot and an edge ring; and a controller is disclosed. The plasma processing apparatus includes: a depressurizable processing chamber; a substrate support table; a lifting mechanism; a gas supply part; and a plasma generating part. The controller controls following steps to be performed in following order: (a) performing plasma processing on the substrate and, then, applying a voltage of a first polarity to the electrode; (b) neutralizing the edge ring, by applying a voltage of a second polarity to the electrode while supplying a gas, and stopping the application of the voltage to the electrode after a predetermined period of time elapses; (c) separating the edge ring from a ring placing surface of the substrate support table; and (d) transferring the edge ring from the processing chamber to the depressurization pressure transfer device.

Abstract: A plasma processing apparatus is provided with: a chamber; a substrate support disposed inside the chamber and including a conductive base, an electrostatic chuck having a substrate support surface and an edge ring support surface, an edge ring disposed on the edge ring support surface, a substrate bias electrode disposed below the substrate support surface, and an edge ring bias electrode disposed below the edge ring support surface; an upper electrode disposed above the substrate support; a radio frequency (RF) generator electrically connected to the conductive base and configured to generate an RF signal; a first voltage pulse generator electrically connected to the substrate bias electrode and configured to generate a sequence of first voltage pulses having a first voltage level; and a second voltage pulse generator electrically connected to the edge ring bias electrode and configured to generate a sequence of second voltage pulses having a second voltage level.

Abstract: A plasma processing apparatus includes: an RF power supply that supplies an RF signal having a first power level during a first state and a second state in a first repetition period, a second power level during a third state in the first repetition period, and a third power level during a fourth state in the first repetition period, the second power level being less than the first power level, the third power level being less than the second power level; and a voltage pulse generator that applies a voltage pulse signal having a first voltage level during the first state in the first repetition period, and a sequence of voltage pulses having a second voltage level during the second state in the first repetition period, an absolute value of the second voltage level being greater than an absolute value of the first voltage level.

Abstract: A substrate processing apparatus includes a processing container, a stage, an edge ring, a lifter, and circuitry. The stage has a first mounting surface and a second mounting surface. The edge ring is placed on the second mounting surface. The lifter moves the edge ring with respect to the second mounting surface. Plasma processing of the substrate is performed while the substrate is positioned on the first mounting surface. Further, a first cleaning process is performed in which a first bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface and then a second cleaning process is formed in which a second bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface.

Abstract: A substrate processing system including a plasma processing apparatus including a processing container, a decompressed transferrer connected to the plasma processing apparatus, and a controller, a substrate support, a ring placing surface for receiving an edge ring, and an electrostatic chuck for electrostatically attracting the edge ring to the ring placing surface, a supply path for supplying a gas between a rear surface of the edge ring and the ring placing surface, and a pressure sensor connected to the supply path, the edge ring is placed on the ring placing surface, gas is supplied to the supply path to maintain a pressure in the supply path to be higher than a pressure in the processing container, the pressure in the supply path is measured by the pressure sensor to determine a placing state of the edge ring on the ring placing surface.

Abstract: A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.

Abstract: The purpose of the present disclosure is to provide a plasma processing apparatus including: a plasma processing chamber; a first bias electrode disposed in an electrostatic chuck to have a first outer diameter; a second bias electrode disposed in the electrostatic chuck to have a second outer diameter; a third bias electrode disposed in the electrostatic chuck to have a third outer diameter; a first DC power supply; a second DC power supply; a third DC power supply; a voltage adder; a first voltage pulse generator electrically connected to the first bias electrode and configured to generate a first voltage pulse signal; a second voltage pulse generator electrically connected to the second bias electrode and configured to generate a second voltage pulse signal; and a third voltage pulse generator electrically connected to the third bias electrode and configured to generate a third voltage pulse signal.

Abstract: A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having a substrate support configured to support a substrate; a shower head having a plurality of gas inlets configured to introduce a gas into respective regions in the plasma processing chamber; a gas supply configured to supply a gas to the plurality of gas inlets; a plasma generator configured to generate a plasma of the gas; and a controller configured to control at least the gas supply. The gas supply includes: a gas unit configured to supply a common gas to the plurality of gas inlets; and an injection unit configured to supply an injection gas to the selected gas inlet among the plurality of gas inlets, and the controller controls the injection unit so that two or more types of injection gases are supplied to two different ones of the plurality of gas inlets.

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.