Abstract: The present disclosure relates to the technical field of positive electrode materials of lithium ion batteries. Disclosed a positive electrode material having a multi-cavity structure and a preparation method therefor, and a lithium ion battery. The positive electrode material is formed by aggregation of a plurality of primary particles, and some of the primary particles grow in an oriented manner to form supporting structures, the supporting structures overlapping each other inside the positive electrode material to form a plurality of cavities. The particle strength of the positive electrode material is significantly improved, so that the positive electrode material has the advantage of a long service life. In addition, the impedance of the positive electrode material is reduced, thereby improving the power performance of the positive electrode material.

Abstract: The present disclosure provides an electrified wire lifting device, including a locking assembly fixed on a bracket of an electric pole for integrally fixing the device; a connecting assembly having one end used for clamping a wire; a lifting assembly mounted on the top of the locking assembly. The present disclosure can adjust the lateral position, so that the wire is lifted; and the lifted connecting assembly is locked and fixed to avoid shaking thereof.

Abstract: Embodiments of the present invention disclose a method and a device for reducing power consumption of a PA, and relate to the field of communications technologies, which can reduce the power consumption of the PA to a maximum extent for components of different batches. A detailed solution is as follows: The station A receives a first link status indication sent by a station B, where the first link status indication includes a parameter of a status of a link from the station A to the station B; and if the parameter included in the first link status indication is greater than a first threshold, the station A decreases a drain voltage of the PA, to reduce the power consumption of the PA. The embodiments of the present invention are applied to a process of communication between point-to-point radio frequency modules.

Abstract: In embodiments of the present disclosure, weighting on a direct current component coefficient dci? of an I-channel signal and a direct current component coefficient dcq? of a Q-channel signal is performed based on spatial leakage factors k1 and k2 of a microwave chip and a current attenuation amount of a tunable attenuator, to determine a corrected direct current component coefficient dci of the I-channel signal and a corrected direct current component coefficient dcq of the Q-channel signal, and a direct current component superimposed to the I-channel signal of the microwave chip and a direct current component superimposed to the Q-channel signal of the microwave chip are respectively determined based on the corrected direct current component coefficient dci of the I-channel signal and the corrected direct current component coefficient dcq of the Q-channel signal.

Abstract: Embodiments of the present invention disclose a method and a device for reducing power consumption of a PA, and relate to the field of communications technologies, which can reduce the power consumption of the PA to a maximum extent for components of different batches. A detailed solution is as follows: The station A receives a first link status indication sent by a station B, where the first link status indication includes a parameter of a status of a link from the station A to the station B; and if the parameter included in the first link status indication is greater than a first threshold, the station A decreases a drain voltage of the PA, to reduce the power consumption of the PA. The embodiments of the present invention are applied to a process of communication between point-to-point radio frequency modules.

Abstract: The present invention discloses a sound wave filtering structure. The sound wave filtering structure comprises a cavity wall, a cavity cover and a slit. The cavity cover is mounted on the cavity wall. The cavity wall and the cavity cover are combined to form an inner cavity. The slit is formed on the cavity wall and/or the cavity cover. The cavity wall and the cavity cover seal the inner cavity. A space in the inner cavity is communicated with the outside only through the slit. On the other hand, the present invention further provides a side sound generating speaker module. The side sound generating speaker module at least comprises a side sound generating cavity and the above-described sound wave filtering structure. The side sound generating cavity is configured to guide sound waves to be transmitted from a side surface of a single speaker body. The sound wave filtering structure is arranged on the side sound generating cavity. The slit faces the interior of the side sound generating cavity.

Abstract: In embodiments of the present disclosure, weighting on a direct current component coefficient dci? of an I-channel signal and a direct current component coefficient dcq? of a Q-channel signal is performed based on spatial leakage factors k1 and k2 of a microwave chip and a current attenuation amount of a tunable attenuator, to determine a corrected direct current component coefficient dci of the I-channel signal and a corrected direct current component coefficient dcq of the Q-channel signal, and a direct current component superimposed to the I-channel signal of the microwave chip and a direct current component superimposed to the Q-channel signal of the microwave chip are respectively determined based on the corrected direct current component coefficient dci of the I-channel signal and the corrected direct current component coefficient dcq of the Q-channel signal.

Abstract: The present invention discloses a sound wave filtering structure. The sound wave filtering structure comprises a cavity wall, a cavity cover and a slit. The cavity cover is mounted on the cavity wall. The cavity wall and the cavity cover are combined to form an inner cavity. The slit is formed on the cavity wall and/or the cavity cover. The cavity wall and the cavity cover seal the inner cavity. A space in the inner cavity is communicated with the outside only through the slit. On the other hand, the present invention further provides a side sound generating speaker module. The side sound generating speaker module at least comprises a side sound generating cavity and the above-described sound wave filtering structure. The side sound generating cavity is configured to guide sound waves to be transmitted from a side surface of a single speaker body. The sound wave filtering structure is arranged on the side sound generating cavity. The slit faces the interior of the side sound generating cavity.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shield plates. The shield plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

Abstract: Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

Abstract: Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

Abstract: The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shield plates. The shield plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The invention disclosed a kind of lactobacillus casei Bd-II, the accession number of the deposit of which is CGMCC NO.0849, and also disclosed a use of it for reducing blood lipid level. Further, a composition for reducing blood lipid level containing it and an acceptable carrier is disclosed. The carrier can be skimmed milk.

Abstract: The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shielding plates. The shielding plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

Abstract: The specification describes an integrated passive device (IPD) designed to allow implementation of cellular RF and Wi-Fi RF in a single hand held device. To address the problem of RF interference a thin film RF high rejection bandpass filter is formed in an IPD implementation. The IPD implementation preferably uses silicon as the substrate material. This allows the thin film RF high rejection bandpass filter to be made using silicon processing technology, and thus produce low cost filters that still meet stringent performance requirements demanded due to the co-existing RF units. In preferred embodiments of the invention, wafer level processing using silicon substrates adds to the cost effective manufacture of the highly functional IPDs.

Abstract: The invention disclosed a kind of lactobacillus casei Bd-II, the accession number of the deposit of which is CGMCC NO. 0849, and also disclosed a use of it for reducing blood lipid level.

Abstract: The specification describes an MCM package which contains both a digital MCM and an RF MCM in a stacked configuration. The package contains means for isolating RF signals from digital signals. In one case the digital MCM substrate is attached to the system substrate and the RF MCM substrate is attached to the digital MCM substrate. Solder bumps are used for attachment in an arrangement resembling a BGA. For high density packages, at least the digital MCM comprises stacked IC chips. In the embodiment with the RF MCM substrate on the top of the stack, Passive Through Interconnections (PTIs) are made through the digital MCM substrate, and electrically isolated therefrom. The passive through interconnections are made through the solder bumps between boards and interconnected using a passive (with respect to the digital MCM board) through hole. Both the RF ground and the RF input can be isolated using PTIs. For additional isolation, the solder bumps comprising the PTIs are shielded with a Faraday cage.

Abstract: The specification describes an MCM package which contains both a digital MCM and an RF MCM in a stacked configuration. The package contains means for isolating RF signals from digital signals. In one case the digital MCM substrate is attached to the system substrate and the RF MCM substrate is attached to the digital MCM substrate. Solder bumps are used for attachment in an arrangement resembling a BGA. For high density packages, at least the digital MCM comprises stacked IC chips. In the embodiment with the RF MCM substrate on the top of the stack, Passive Through Interconnections (PTIs) are made through the digital MCM substrate, and electrically isolated therefrom. The passive through interconnections are made through the solder bumps between boards and interconnected using a passive (with respect to the digital MCM board) through hole. Both the RF ground and the RF input can be isolated using PTIs. For additional isolation, the solder bumps comprising the PTIs are shielded with a Faraday cage.