Patents by Inventor Lih-Ping Wang

Lih-Ping Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7648783
    Abstract: A cadmium tin oxide (Cd1?xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1?xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1?xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1?xSnxO; and (b) sputtering films of Cd1?xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: January 19, 2010
    Assignees: Industrial Research Technology Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Shian-Jy Wang, Shu-Hei Wang, John R. Rodgers
  • Publication number: 20060141266
    Abstract: A cadmium tin oxide (Cd1-xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1-xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1-xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1-xSnxO; and (b) sputtering films of Cd1-xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Application
    Filed: December 20, 2005
    Publication date: June 29, 2006
    Applicants: Industrial technology Research Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Wang, Shu-Hei Wang, John Rodgers