Patents by Inventor Lih-Tien Shyu

Lih-Tien Shyu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10714600
    Abstract: Some embodiments are directed to a bipolar junction transistor (BJT) with a collector region formed within a body of a semiconductor substrate, and an emitter region arranged over an upper surface of the semiconductor substrate. The BJT includes a base region arranged over the upper surface of the semiconductor substrate, which vertically separates the emitter and collector regions. The base region is arranged within, and in contact with, a conductive base layer, which delivers current to the base region. The base region includes a planar bottom surface, which increases contact area between the base region and the semiconductor substrate, thus decreasing resistance at the collector/base junction, over some conventional approaches. The base region can also include substantially vertical sidewalls, which increases contact area between the base region and the conductive base layer, thus improving current delivery to the base region.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lih-Tien Shyu, Yeur-Luen Tu
  • Publication number: 20180047837
    Abstract: Some embodiments are directed to a bipolar junction transistor (BJT) with a collector region formed within a body of a semiconductor substrate, and an emitter region arranged over an upper surface of the semiconductor substrate. The BJT includes a base region arranged over the upper surface of the semiconductor substrate, which vertically separates the emitter and collector regions. The base region is arranged within, and in contact with, a conductive base layer, which delivers current to the base region. The base region includes a planar bottom surface, which increases contact area between the base region and the semiconductor substrate, thus decreasing resistance at the collector/base junction, over some conventional approaches. The base region can also include substantially vertical sidewalls, which increases contact area between the base region and the conductive base layer, thus improving current delivery to the base region.
    Type: Application
    Filed: October 25, 2017
    Publication date: February 15, 2018
    Inventors: Lih-Tien Shyu, Yeur-Luen Tu
  • Patent number: 9831328
    Abstract: Some embodiments are directed to a bipolar junction transistor (BJT) with a collector region formed within a body of a semiconductor substrate, and an emitter region arranged over an upper surface of the semiconductor substrate. The BJT includes a base region arranged over the upper surface of the semiconductor substrate, which vertically separates the emitter and collector regions. The base region is arranged within, and in contact with, a conductive base layer, which delivers current to the base region. The base region includes a planar bottom surface, which increases contact area between the base region and the semiconductor substrate, thus decreasing resistance at the collector/base junction, over some conventional approaches. The base region can also include substantially vertical sidewalls, which increases contact area between the base region and the conductive base layer, thus improving current delivery to the base region.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: November 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lih-Tien Shyu, Yeur-Luen Tu
  • Publication number: 20160240636
    Abstract: Some embodiments are directed to a bipolar junction transistor (BJT) with a collector region formed within a body of a semiconductor substrate, and an emitter region arranged over an upper surface of the semiconductor substrate. The BJT includes a base region arranged over the upper surface of the semiconductor substrate, which vertically separates the emitter and collector regions. The base region is arranged within, and in contact with, a conductive base layer, which delivers current to the base region. The base region includes a planar bottom surface, which increases contact area between the base region and the semiconductor substrate, thus decreasing resistance at the collector/base junction, over some conventional approaches. The base region can also include substantially vertical sidewalls, which increases contact area between the base region and the conductive base layer, thus improving current delivery to the base region.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Lih-Tien Shyu, Yeur-Luen Tu