Abstract: The present invention relates to a scaffold preparation method and a scaffold prepared thereby, and more particularly to a method for preparing a scaffold for promoting bone regeneration, the method comprising physically and chemically attaching collagen and SDF-1 to the scaffold, and to a scaffold prepared thereby. According to the present invention, the surface of a scaffold is treated with 3-APTES so that collagen and SDF-1 can be physically and chemically attached to the scaffold, so that the release rate of SDF-1 on the scaffold will not rapidly change even with the passage of time while integrin will recognize SDF-1 of the scaffold as a suitable extracellular matrix, thereby shortening the time required for restoration of bone defects.

Abstract: An illumination device includes a plurality of housings installed on a lamp holder, and each housing being arranged at the bottom of the lamp holder and tilted in a specific direction towards an exit aperture and having a light emitting diode device installed on each housing and opposite to two sidewalls on both sides of the inclined direction, and a reflection cover installed between adjacent housings, and each reflection cover having a plurality of first reflection surfaces and second reflection surfaces extended into each housing and towards the exterior of the housing. With the effect of the first and second reflection surfaces, the light source can be projected towards the exterior of the lamp holder effectively to increases the overall light projection range of the illumination device.

Abstract: An LED illuminator has a seat and multiple LED modules mounted on the seat. The seat has multiple chambers, each of which has two opposite sidewalls, a bottom, two through holes and an opening. The two through holes are respectively defined on the sidewalls and the opening is defined the bottom. The LED modules are respectively mounted on the sidewalls of the chambers on the seat and standing on the seat at an inclined angle to allow lights pass through the openings of the chambers. Therefore, each chamber has two light sources from two opposite sidewalls and the lights of the two lights source pass through the opening of the chamber. The LED illuminator provides a wide illuminating angle.

Abstract: An illumination device includes a plurality of housings installed on a lamp holder, and each housing being arranged at the bottom of the lamp holder and tilted in a specific direction towards an exit aperture and having a light emitting diode device installed on each housing and opposite to two sidewalls on both sides of the inclined direction, and a reflection cover installed between adjacent housings, and each reflection cover having a plurality of first reflection surfaces and second reflection surfaces extended into each housing and towards the exterior of the housing. With the effect of the first and second reflection surfaces, the light source can be projected towards the exterior of the lamp holder effectively to increases the overall light projection range of the illumination device.

Abstract: A method for controlling the brightness and increasing uniformity of light generated by Lambertian surface sources has the steps of providing multiple pairs of Lambertian surface sources to produce light emitting on a target surface, each pair of Lambertian surface sources consisting of two Lambertian surface sources; rotating the two Lambertian surface sources of the same pair by a same rotation angle relative to the target surface but in opposite directions; calculating a maximum illumination and a minimum illumination corresponding to the rotation angle; determining whether a ratio of the maximum illumination to the minimum illumination is lower than a threshold; and fixing the Lambertian surface sources at the rotation angle if the ratio is lower than the threshold.

Abstract: A method for controlling the brightness and increasing uniformity of light generated by Lambertian surface sources has the steps of providing multiple pairs of Lambertian surface sources to produce light emitting on a target surface, each pair of Lambertian surface sources consisting of two Lambertian surface sources; rotating the two Lambertian surface sources of the same pair by a same rotation angle relative to the target surface but in opposite directions; calculating a maximum illumination and a minimum illumination corresponding to the rotation angle; determining whether a ratio of the maximum illumination to the minimum illumination is lower than a threshold; and fixing the Lambertian surface sources at the rotation angle if the ratio is lower than the threshold.

Abstract: An LED illuminator has a seat and multiple LED modules mounted on the seat. The seat has multiple chambers, each of which has two opposite sidewalls, a bottom, two through holes and an opening. The two through holes are respectively defined on the sidewalls and the opening is defined the bottom. The LED modules are respectively mounted on the sidewalls of the chambers on the seat and standing on the seat at an inclined angle to allow lights pass through the openings of the chambers. Therefore, each chamber has two light sources from two opposite sidewalls and the lights of the two lights source pass through the opening of the chamber. The LED illuminator provides a wide illuminating angle.

Abstract: A method for improving the planarity of a semiconductor chip using chemical-mechanical polishing during a shallow trench isolation process is described. Specifically, an polish-stop layer, preferably of silicon nitride, is formed over a semiconductor wafer (or optionally formed over a pad oxide layer formed on the wafer). A cap layer, preferably of polysilicon, is then formed over the polish-stop layer. The active regions of the chip are defined, preferably using a photoresist mask by photolithography. The wafer, polish-stop and cap layers are then etched, between the active regions, to form shallow trenches. A lining dielectric layer, preferably an oxide, is formed over the etched and non-etched regions to fill the shallow trenches for isolation purposes. The dielectric layer has an etching rate at least three times greater than the etching rate of cap layer. When polysilicon is selected as the cap layer and oxide is selected as the dielectric layer, the selectivity rate is greater than ten.