Patents by Inventor Lihan Lin

Lihan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a silicon nitride layer on a gate oxide film of a semiconductor device and annealing the nitride layer
    Patent number: 7638442
    Abstract: A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2 in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2 and N2O in the annealing chamber.
    Type: Grant
    Filed: May 9, 2008
    Date of Patent: December 29, 2009
    Assignee: ProMOS Technologies, Inc.
    Inventors: Cheng-Ta Wu, Da-Yu Chuang, Yen-Da Chen, Lihan Lin
  • METHOD OF FORMING A SILICON NITRIDE LAYER ON A GATE OXIDE FILM OF A SEMICONDUCTOR DEVICE AND ANNEALING THE NITRIDE LAYER
    Publication number: 20090280654
    Abstract: A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2 in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2 and N2O in the annealing chamber.
    Type: Application
    Filed: May 9, 2008
    Publication date: November 12, 2009
    Inventors: Cheng-Ta Wu, Da-Yu Chuang, Yen-Da Chen, Lihan Lin