Abstract: Imaging methods, apparatus and systems are provided for using different irradiation frequencies to generate a composite three-dimensional image. One exemplary method for imaging a semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response.

Abstract: Imaging methods, apparatus and systems are provided for using different irradiation frequencies to generate a composite three-dimensional image. One exemplary method for imaging a semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response.

Abstract: Methods and apparatus to protect fragile dielectric layers in a semiconductor chip are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first polymer layer over a conductor pad of a semiconductor chip where the conductor pad has a first lateral dimension. An underbump metallization structure is formed on the first polymer layer and in ohmic contact with the conductor pad. The underbump metallization structure has a second lateral dimension greater than the first lateral dimension. A second polymer layer is formed on the first polymer layer with a first opening exposing at least a portion of the underbump metallization structure.

Abstract: A system including a communication circuit and a microprocessor operable to execute instruction code associated with at least a first operating system and a second operating system. The system also includes a volatile system memory to store executable code, a nonvolatile memory to store executable startup code, and nonvolatile image storage to store at least one captured state image. The captured state image includes an image of system memory in a captured state associated with a non-executing operating system. The system further includes a system transition routine to transition between the executing operating system and the non-executing operating system when an application to be run on the microprocessor requires the non-executing operating system. The system transition routine converts content of volatile memory and microprocessor registers to a captured state in accordance with the non-executing operating system captured state image stored in the nonvolatile image storage.

Abstract: A system including a communication circuit and a microprocessor operable to execute instruction code associated with at least a first operating system and a second operating system. The system also includes a volatile system memory to store executable code, a nonvolatile memory to store executable startup code, and nonvolatile image storage to store at least one captured state image. The captured state image includes an image of system memory in a captured state associated with a non-executing operating system. The system further includes a system transition routine to transition between the executing operating system and the non-executing operating system when an application to be run on the microprocessor requires the non-executing operating system. The system transition routine converts content of volatile memory and microprocessor registers to a captured state in accordance with the non-executing operating system captured state image stored in the nonvolatile image storage.

Abstract: For temperature cycling at a material of an IC (integrated circuit) package, a laser beam is directed to the material such that the material absorbs the laser beam to become heated. A laser controller adjusts at least one property of the laser beam until the temperature of the material reaches a predetermined high-end temperature. The present invention may be used for a flip-chip IC package with the laser beam being directed toward a back-side of an IC die that is exposed on the IC package. In that case, the laser beam is comprised of light having a wavelength that is within a transmission region of a semiconductor material of the IC die such that the laser beam reaches the material on the front side of the IC die.