Patents by Inventor Lihua TENG

Lihua TENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10211106
    Abstract: A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: February 19, 2019
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Ming Wang, Qiancheng Ma, Yong Cheng, Lihua Teng
  • Publication number: 20180061713
    Abstract: A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.
    Type: Application
    Filed: November 7, 2017
    Publication date: March 1, 2018
    Inventors: Ming WANG, Qiancheng MA, Yong CHENG, Lihua TENG
  • Patent number: 9824928
    Abstract: A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: November 21, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Ming Wang, Qiancheng Ma, Yong Cheng, Lihua Teng
  • Publication number: 20150187928
    Abstract: A semiconductor device may include a first-type substrate. The semiconductor device may further include a second-type well configured to form a PN junction with the first-type substrate. The semiconductor device may further include a diode component configured to form a diode with the second-type well. The diode may be connected to the PN junction in a reverse series connection. The second-type may be N-type if the first-type is P-type, and wherein the second-type may be P-type if the first-type is N-type.
    Type: Application
    Filed: November 4, 2014
    Publication date: July 2, 2015
    Inventors: Ming WANG, Qiancheng MA, Yong CHENG, Lihua TENG