Patents by Inventor Lijiang Zhang

Lijiang Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11239081
    Abstract: A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer (203) on an upper surface of a device (S1); implanting silicon ions and/or indium ions in a region of the first dielectric layer (203) corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S2); growing a second dielectric layer (206) on an upper surface of the first dielectric layer (203) (S3); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S4); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer (203) and the second dielectric layer (206) (S5); growing a metal layer (208) on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S6).
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: February 1, 2022
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS
    Inventors: Yongliang Tan, Xingzhong Fu, Zexian Hu, Xiangwu Liu, Lijiang Zhang, Yuxing Cui, Xingchang Fu
  • Publication number: 20210057221
    Abstract: A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer (203) on an upper surface of a device (51); implanting silicon ions and/or indium ions in a region of the first dielectric layer (203) corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S2); growing a second dielectric layer (206) on an upper surface of the first dielectric layer (203) (S3); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S4); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer (203) and the second dielectric layer (206) (S5); growing a metal layer (208) on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S6).
    Type: Application
    Filed: February 27, 2019
    Publication date: February 25, 2021
    Inventors: Yongliang TAN, Xingzhong FU, Zexian HU, Xiangwu LiU, Lijiang ZHANG, Yuxing CUI, Xingchang FU
  • Patent number: 8924456
    Abstract: A method and a system are disclosed for processing online joint guarantee. After a server receives an application from a user, the server provides various types of joint guarantee grouping to the user for selection. The server creates a joint guarantee group having a unique ID according to the selection of the user, organizes the information of the joint guarantee group into a data packet and sends the data packet to a bank system to be approved. The method potentially improves the success rate of joint guarantee grouping and removes the geographical limitations. Through the Internet, the method makes it possible to join companies of different geographical locations for online joint guarantee. The method also establishes a complete online alert mechanism, and realizes computerized loan risk control to improve the business credit system.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: December 30, 2014
    Assignee: Alibaba Group Holding Limited
    Inventors: Xiaoming Hu, Jing Gao, Feng Li, Jinbo Xia, Yanmin Xu, Weiyan Lv, Lijiang Zhang, Zhengwei Zhang