Abstract: A frequency signal generating system comprises a digital phase-locked loop for receiving a source frequency signal; a loop filter for filtering out high frequency components of a signal output from the digital phase-locked loop; and a voltage controlled oscillator for outputting a target frequency signal according to a signal from the loop filter, wherein an output terminal of the voltage controlled oscillator is connected to a first output terminal of the digital phase-locked loop so that the target frequency signal output from the voltage controlled oscillator is fed back to the digital phase-locked loop, the digital phase-locked loop performs frequency-dividing and phase-detecting on the source frequency signal and the fed back target frequency signal so that the target frequency signal output from the voltage controlled oscillator and the source frequency signal satisfy a definite mathematical relationship therebetween.

Abstract: There is provided a video signal transmission apparatus, a play system and a transmission method. The video signal transmission apparatus comprises: a first interface configured to be connected with a video signal source; a second interface configured to be connected with a display device; a signal receiving unit and a control unit arranged between the first interface and the second interface, the control unit being connected with the display device through the second interface and the signal receiving unit being connected with the video signal source through the first interface. The control unit comprises an acquiring module configured to acquire parameter information of the display device and feed acquired parameter information back to the signal receiving unit.

Abstract: There is provided an image interpolation method and an image interpolation apparatus. The image interpolation method comprising: interpolating pixels of a source image with zeros to form an up-sampling image; obtaining a reference interpolation kernel using the up-sampling image; and convolving the pixels of the source image, the reference interpolation kernel and a directional shift coefficient matrix to perform reference kernel interpolation based on directional shift on the source image.

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract: A display system is disclosed. Light emitting diodes and laser diodes are used to provide backlight sources for the display panel. A first driving unit configured for driving light emitting diodes to emit light and a second driving unit configured for driving laser diodes to emit light are provided accordingly. A control module acquires image signals to be displayed in the display panel and determines whether the image to be displayed need to be compensated for its picture quality; if so, the control module controls a first driving unit and a second driving unit to drive light emitting diodes and laser diodes respectively to emit light together; and if not, only controls a first driving unit to drive light emitting diodes to emit light. The display system can effectively increase color gamut range of a liquid crystal display.

Abstract: There is provided a video signal transmission apparatus, a play system and a transmission method. The video signal transmission apparatus comprises: a first interface configured to be connected with a video signal source; a second interface configured to be connected with a display device; a signal receiving unit and a control unit arranged between the first interface and the second interface, the control unit being connected with the display device through the second interface and the signal receiving unit being connected with the video signal source through the first interface. The control unit comprises an acquiring module configured to acquire parameter information of the display device and feed acquired parameter information back to the signal receiving unit.

Abstract: The present disclosure relates to a white LED light source, a backlight module and a liquid crystal display device. The white LED light source comprises a light strip having a plurality of LED units and a plurality of laser units. Each LED unit has a chip emitting lights of a first color light and a fluorescent module induced by the lights of the first color to emit lights of a second color. The plurality of laser units emit lights of a third color so as to form white lights by mixing the lights of the second color emitted by the LED units and the lights of the third color emitted by the laser units. In the white LED light source according to the present disclosure, laser units are used so as to expand the color gamut of the liquid crystal display device.

Abstract: A semiconductor memory device includes pillars extending upright on a substrate in a direction perpendicular to the substrate, a stack disposed on the substrate and constituted by a first interlayer insulating layer, a first conductive layer, a second interlayer insulating layer, and a second conductive layer, a variable resistance layer interposed between the pillars and the first conductive layer, and an insulating layer interposed between the first pillars and the second conductive layer.

Abstract: A frequency signal generating system comprises a digital phase-locked loop for receiving a source frequency signal; a loop filter for filtering out high frequency components of a signal output from the digital phase-locked loop; and a voltage controlled oscillator for outputting a target frequency signal according to a signal from the loop filter, wherein an output terminal of the voltage controlled oscillator is connected to a first output terminal of the digital phase-locked loop so that the target frequency signal output from the voltage controlled oscillator is fed back to the digital phase-locked loop, the digital phase-locked loop performs frequency-dividing and phase-detecting on the source frequency signal and the fed back, target frequency signal so that the target frequency signal output from the voltage controlled oscillator and the source frequency signal satisfy a definite mathematical relationship therebetween.

Abstract: A semiconductor memory device includes pillars extending upright on a substrate in a direction perpendicular to the substrate, a stack disposed on the substrate and constituted by a first interlayer insulating layer, a first conductive layer, a second interlayer insulating layer, and a second conductive layer, a variable resistance layer interposed between the pillars and the first conductive layer, and an insulating layer interposed between the first pillars and the second conductive layer.

Abstract: The present invention discloses a transparent flexible resistive memory and a fabrication method thereof. The transparent flexible resistive memory includes a transparent flexible substrate, a memory unit with a MIM capacitor structure over the substrate, wherein a bottom electrode and a top electrode of the memory unit are transparent and flexible, and an intermediate resistive layer is a transparent flexible film of poly(p-xylylene). Poly(p-xylylene) has excellent resistive characteristics. In the device, the substrate, the electrodes and the intermediate resistive layer are all formed of transparent flexible material so that a completely transparent flexible resistive memory which can be used in a transparent flexible electronic system is obtained.

Abstract: The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as Ta2O5, TiO2, HfO2), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.

Abstract: The invention provides a novel Exendin variant and the Exendin variant conjugate conjugating polymer thereon, the pharmaceutical composition comprising them and use of them for treating diseases such as reducing blood glucose, treating diabetes, especially Type II diabetes. The invention also provides the use of Exendin conjugate for lowering body weight.

Abstract: The present invention discloses a method for fabricating a resistive memory, including: fabricating a bottom electrode over a substrate; partially oxidizing a metal of the bottom electrode through dry-oxygen oxidation or wet-oxygen oxidation to form a metal oxide with a thickness of 3 nm to 50 nm as a resistive material layer; finally fabricating a top electrode over the resistive material layer. The present invention omits a step of depositing a resistive material layer in a conventional method, so as to greatly reduce the process complexity. Meanwhile, a self alignment between the resistive material layer and the bottom electrode can be realized. A full isolation between devices may be ensured so as to obviate the parasite effects occurred in the conventional process methods. Meanwhile, the actual area and designed area of the device are ensured to be consistent.

Abstract: The present invention provides an ESD protection device comprising a SCR structure that is a transverse PNPN structure formed by performing a P-type implantation and an N-type implantation in an N-well and a P-well on a silicon substrate, respectively, wherein a P-type doped region in the N-well is used as an anode, and N-type doped region in the P-well is used as a cathode, characterized in that, N-type dopants are implanted into the N-well to form one lead-out terminal of a resistor, P-type dopants are implanted into the P-well to form another lead-out terminal for the resistor, and the two leading-out terminals are connected by the resistor.

Abstract: The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as Ta2O5, TiO2, HfO2), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.

Abstract: The invention provides a novel Exendin variant and the Exendin variant conjugate conjugating polymer thereon, the pharmaceutical composition comprising them and use of them for treating diseases such as reducing blood glucose, treating diabetes, especially Type II diabetes. The invention also provides the use of Exendin conjugate for lowering body weight.

Abstract: The present invention relates to a field of nonvolatile memory technology in ULSI circuits manufacturing technology and discloses a 3D-structured resistive-switching memory array and a method for fabricating the same.

Abstract: The present invention provides an ESD protection device comprising a SCR structure that is a transverse PNPN structure formed by performing a P-type implantation and an N-type implantation in an N-well and a P-well on a silicon substrate, respectively, wherein a P-type doped region in the N-well is used as an anode, and N-type doped region in the P-well is used as a cathode, characterized in that, N-type dopants are implanted into the N-well to form one lead-out terminal of a resistor, P-type dopants are implanted into the P-well to form another lead-out terminal for the resistor, and the two leading-out terminals are connected by the resistor.