Abstract: A device for defibrillation and monitoring, a monitoring component, and a component for defibrillation and monitoring, are disclosed. The device for defibrillation and monitoring includes a host and a monitoring apparatus, which are assembled and disassembled through a detachably connection. The host is capable of independently performing defibrillation operations and display defibrillation information at least. Therefore, when it is necessary to go out for defibrillation operation alone, only the host is carried to medical assistance facilities. This monitoring apparatus can independently implement monitoring functions. When it is necessary to go out for implementing separate monitoring operations, just the monitoring apparatus is carried to the medical assistance facilities. Therefore, the user flexibly selects the devices they carry according to their requirements, improving the convenience of use.

Abstract: Techniques for area scaling of contacts in VTFET devices are provided. In one aspect, a VTFET device includes: a fin(s); a bottom source/drain region at a base of the fin(s); a gate stack alongside the fin(s); a top source/drain region present at a top of the fin(s); a bottom source/drain contact to the bottom source/drain region; and a gate contact to the gate stack, wherein the bottom source drain and gate contacts each includes a top portion having a width W1CONTACT over a bottom portion having a width W2CONTACT, wherein W2CONTACT<W1CONTACT, and wherein a sidewall along the top portion is discontinuous with a sidewall along the bottom portion. The bottom portion having the width W2CONTACT is present alongside the gate stack and the top source/drain region. A method of forming a VTFET device is also provided.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: Controlled IBE techniques for MRAM stack patterning are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cells using IBE landing on the dielectric while dynamically adjusting an etch time to compensate for variations in a thickness of the MRAM stack, wherein each of the memory cells includes a bottom electrode, an MTJ, and a top electrode; removing foot flares from the bottom electrode of the memory cells which are created during the patterning of the MRAM stack; removing residue from sidewalls of the memory cells which includes metal redeposited during the patterning of the MRAM stack and during the removing of the foot flares; and covering the memory cells in a dielectric encapsulant. An MRAM device is also provided.

Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: Controlled IBE techniques for MRAM stack patterning are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cells using IBE landing on the dielectric while dynamically adjusting an etch time to compensate for variations in a thickness of the MRAM stack, wherein each of the memory cells includes a bottom electrode, an MTJ, and a top electrode; removing foot flares from the bottom electrode of the memory cells which are created during the patterning of the MRAM stack; removing residue from sidewalls of the memory cells which includes metal redeposited during the patterning of the MRAM stack and during the removing of the foot flares; and covering the memory cells in a dielectric encapsulant. An MRAM device is also provided.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.

Abstract: The present invention discloses a cultivation method for the rapid propagation of Davidia involucrata winter buds. The method includes the following steps: (1) collecting winter buds of Davidia involucrata as explants; (2) disinfecting and sterilizing; (3) primary culture of the winter buds; (4) propagation cultivating; (5) cultivating of the strong seedlings; (6) cultivating roots; (7) acclimatization and transplanting; (8) water and fertilizer management. The method of the present invention can effectively promote the artificial propagation of Davidia involucrata and improve the survival rate thereof.

Abstract: The present invention discloses a cultivation method for the rapid propagation of Davidia involucrata winter buds. The method includes the following steps: (1) collecting winter buds of Davidia involucrata as explants; (2) disinfecting and sterilizing; (3) primary culture of the winter buds; (4) propagation cultivating; (5) cultivating of the strong seedlings; (6) cultivating roots; (7) acclimatization and transplanting; (8) water and fertilizer management. The method of the present invention can effectively promote the artificial propagation of Davidia involucrata and improve the survival rate thereof.

Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.

Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.

Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.

Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.

Abstract: The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.

Abstract: Disclosed herein is a method for fabricating an optical device that includes depositing an etch stop material to form an etch stop layer, wherein the etch stop material has a refractive index in the infrared wavelength range, n1; depositing a core material to form a core layer, wherein the core material has a refractive index in the infrared wavelength range, n2; and etching the core layer using a halide based etch process, wherein the etch stop material has an etch rate in the halide based etch process and the core material has an etch rate in the halide based etch process, wherein the etch rate of the core material is at least about five times higher than the etch rate of the etch stop material, and wherein n1 is not greater than n2.

Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.

Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.

Abstract: A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.