Patents by Inventor Lijuan Zou

Lijuan Zou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11158786
    Abstract: Controlled IBE techniques for MRAM stack patterning are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cells using IBE landing on the dielectric while dynamically adjusting an etch time to compensate for variations in a thickness of the MRAM stack, wherein each of the memory cells includes a bottom electrode, an MTJ, and a top electrode; removing foot flares from the bottom electrode of the memory cells which are created during the patterning of the MRAM stack; removing residue from sidewalls of the memory cells which includes metal redeposited during the patterning of the MRAM stack and during the removing of the foot flares; and covering the memory cells in a dielectric encapsulant. An MRAM device is also provided.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: October 26, 2021
    Assignee: International Business Machines Corporation
    Inventors: Ashim Dutta, Chih-Chao Yang, Lijuan Zou, John Arnold
  • Patent number: 11015256
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: May 25, 2021
    Assignee: Seagate Technology LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Publication number: 20210151558
    Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.
    Type: Application
    Filed: December 28, 2020
    Publication date: May 20, 2021
    Inventors: Zhenxing Bi, Kangguo Cheng, Yi Song, Lijuan Zou
  • Publication number: 20210091306
    Abstract: Controlled IBE techniques for MRAM stack patterning are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cells using IBE landing on the dielectric while dynamically adjusting an etch time to compensate for variations in a thickness of the MRAM stack, wherein each of the memory cells includes a bottom electrode, an MTJ, and a top electrode; removing foot flares from the bottom electrode of the memory cells which are created during the patterning of the MRAM stack; removing residue from sidewalls of the memory cells which includes metal redeposited during the patterning of the MRAM stack and during the removing of the foot flares; and covering the memory cells in a dielectric encapsulant. An MRAM device is also provided.
    Type: Application
    Filed: September 25, 2019
    Publication date: March 25, 2021
    Inventors: Ashim Dutta, Chih-Chao Yang, Lijuan Zou, John Arnold
  • Patent number: 10937860
    Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: March 2, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Zhenxing Bi, Kangguo Cheng, Yi Song, Lijuan Zou
  • Publication number: 20200295130
    Abstract: Semiconductor devices and methods of forming the same include forming slanted dielectric structures from a first dielectric material on a substrate, with gaps between adjacent slanted dielectric structures. A first semiconductor layer is grown from the substrate, using a first semiconductor material, including a lower portion that fills the gaps and an upper portion above the first dielectric material. The lower portion of the first semiconductor layer is replaced with additional dielectric material.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 17, 2020
    Inventors: Zhenxing Bi, Kangguo Cheng, Yi Song, Lijuan Zou
  • Patent number: 10624278
    Abstract: The present invention discloses a cultivation method for the rapid propagation of Davidia involucrata winter buds. The method includes the following steps: (1) collecting winter buds of Davidia involucrata as explants; (2) disinfecting and sterilizing; (3) primary culture of the winter buds; (4) propagation cultivating; (5) cultivating of the strong seedlings; (6) cultivating roots; (7) acclimatization and transplanting; (8) water and fertilizer management. The method of the present invention can effectively promote the artificial propagation of Davidia involucrata and improve the survival rate thereof.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: April 21, 2020
    Assignees: MIANYANG TEACHERS' COLLEGE, MIANYANG SHUCHUANG AGRICULTURAL TECHNOLOGY CO., LTD.
    Inventors: Jinyao Hu, Lijuan Zou, Li Xiang
  • Publication number: 20190059247
    Abstract: The present invention discloses a cultivation method for the rapid propagation of Davidia involucrata winter buds. The method includes the following steps: (1) collecting winter buds of Davidia involucrata as explants; (2) disinfecting and sterilizing; (3) primary culture of the winter buds; (4) propagation cultivating; (5) cultivating of the strong seedlings; (6) cultivating roots; (7) acclimatization and transplanting; (8) water and fertilizer management. The method of the present invention can effectively promote the artificial propagation of Davidia involucrata and improve the survival rate thereof.
    Type: Application
    Filed: March 15, 2018
    Publication date: February 28, 2019
    Applicants: Mianyang Teachers' College, Mianyang Shuchuang Agricultural Technology Co., Ltd.
    Inventors: Jinyao HU, Lijuan ZOU, Li XIANG
  • Publication number: 20190048487
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Application
    Filed: October 15, 2018
    Publication date: February 14, 2019
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Patent number: 10100422
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: October 16, 2018
    Assignee: Seagate Technology LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Patent number: 9437221
    Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: September 6, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Lien Lee, Yongjun Zhao, Lijuan Zou, Mark Henry Ostrowski
  • Patent number: 9385089
    Abstract: When opaque films are deposited on semi-conductor wafers, underlying alignment marks may be concealed. The re-exposure of such alignment marks is one source of resulting surface topography. In accordance with one implementation, alignment marks embedded in a wafer may be exposed by removing material from one or more layers and by replacing such material with a transparent material. In accordance with another implementation, the amount of material removed in an alignment mark recovery process may be mitigated by selectively ashing or etching above a stop layer.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: July 5, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Dongsung Hong, Lijuan Zou, Daniel Sullivan, Lily Horng Youtt
  • Patent number: 9378757
    Abstract: The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 28, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Yongjun Zhao, Dongsung Hong, Lijuan Zou, Mark Ostrowski
  • Patent number: 9297959
    Abstract: Disclosed herein is a method for fabricating an optical device that includes depositing an etch stop material to form an etch stop layer, wherein the etch stop material has a refractive index in the infrared wavelength range, n1; depositing a core material to form a core layer, wherein the core material has a refractive index in the infrared wavelength range, n2; and etching the core layer using a halide based etch process, wherein the etch stop material has an etch rate in the halide based etch process and the core material has an etch rate in the halide based etch process, wherein the etch rate of the core material is at least about five times higher than the etch rate of the etch stop material, and wherein n1 is not greater than n2.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: March 29, 2016
    Assignee: Seagate Technology LLC
    Inventors: Xiaoyue Huang, Lijuan Zou, Yongjun Zhao, Michael Kautzky
  • Publication number: 20150371669
    Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.
    Type: Application
    Filed: August 31, 2015
    Publication date: December 24, 2015
    Inventors: Lien Lee, Yongjun Zhao, Lijuan Zou, Mark Henry Ostrowski
  • Patent number: 9142231
    Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: September 22, 2015
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Yongjun Zhao, Lien Lee, Lijuan Zou, Mark Henry Ostrowski
  • Patent number: 9058823
    Abstract: A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: June 16, 2015
    Assignee: Seagate Technology LLC
    Inventors: Alexey V. Nazarov, Vladyslav Alexandrovich Vasko, Olle Gunnar Heinonen, Lijuan Zou, Thomas R. Boonstra, Xilin Peng, Kaizhong Gao
  • Publication number: 20150083601
    Abstract: Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.
    Type: Application
    Filed: September 25, 2013
    Publication date: March 26, 2015
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Lien Lee, Jie Gong, Venkatram Venkatasamy, Yongjun Zhao, Lijuan Zou, Dongsung Hong, Ibro Tabakovic, Mark Ostrowski
  • Publication number: 20140254339
    Abstract: A method of making a transducer head disclosed herein includes depositing a spacer layer on an NFT layer of the transducer head, forming an etch stop layer on a spacer layer of a transducer, depositing a cladding layer on the etch stop layer, and milling the cladding layer at a sloped angle such that the milling stops at the etch stop layer.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 11, 2014
    Inventors: Yongjun Zhao, Lien Lee, Lijuan Zou, Mark Henry Ostrowski
  • Publication number: 20140251948
    Abstract: The disclosed methods enable the production of plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The plasmonic near-field transducers have an enlarged region and a peg region. The peg region includes a peg region in proximity to an air-bearing surface above a recording medium and also includes a flared region between and in contact with the enlarged region and the peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg portion of the near-field transducer, thus reducing its temperature.
    Type: Application
    Filed: March 7, 2013
    Publication date: September 11, 2014
    Applicant: Seagate Technology LLC
    Inventors: Yongjun Zhao, Dongsung Hong, Lijuan Zou, Mark Ostrowski