Abstract: A preparation method of quantum dot light emitting diode, including steps of: providing a prefabricated device, and forming zinc oxide nanomaterial on the prefabricated device, to prepare an electron transport layer; and performing heat treatment to the processed device, such that an amount of surface hydroxyl groups of the electron transport layer is 0.15-0.6. Through the heat treatment to the device provided with the electron transport layer, the amount of the surface hydroxyl groups of the electron transport layer is regulated, the fluorescence quenching effect of the surface hydroxyl groups of the electron transport layer to the quantum dot light-emitting layer is reduced; meanwhile, the heat treatment may reduce the amount of the surface hydroxyl groups of the electron transport layer, and as the number of the surface hydroxyl groups of the zinc oxide decreases, the electron and hole injection balance is optimized, the carrier radiation recombination efficiency is improved.

Abstract: The present application discloses an optoelectronic device, including an anode, a hole transport layer disposed on the anode, a quantum dot light-emitting layer disposed on the hole transport layer, and a cathode disposed on the quantum dot light-emitting layer; the quantum dot light-emitting layer includes a quantum dot material in a core-shell structure, and a difference between a top energy level of a valence band of an outer shell layer material of the quantum dot material and that of a hole transport material in the hole transport layer is greater than or equal to 0.5 eV.

Abstract: The present disclosure provides a quantum dot light-emitting diode, a manufacturing method thereof, and a quantum dot film. The quantum dot light-emitting diode includes a first electrode, a second electrode, and a quantum dot light-emitting layer. The quantum dot light-emitting layer is disposed between the first electrode and the second electrode. The quantum dot light-emitting layer includes a first quantum dot and a second quantum dot, and an absolute value of a difference between a photoluminescence peak wavelength of the first quantum dot and a photoluminescence peak wavelength of the second quantum dot is less than or equal to 10 nm.

Abstract: A photoelectric device, which includes an anode, a first hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and a cathode arranged in sequence, and an absolute value of a difference between a maximum energy level of valence band of a hole transport material in the hole transport layer and a work function of a first hole injection material in the first hole injection layer is smaller than or equal to 0.2 eV.

Abstract: A quantum dot film, a method for preparing the same, and a quantum dot light emitting diode are provided. The method for preparing the quantum dot film includes: providing a substrate; and depositing a mixed solution containing a quantum dot and a high molecular polymer onto the substrate, and performing annealing treatment to obtain the quantum dot film. A temperature of the annealing treatment is greater than or equal to a glass transition temperature of the high molecular polymer. The preparation method can make the position of the quantum dot in the quantum dot film rearranged, such that the quantum dot is tightly accumulated and regularly arranged in the high molecular polymer, whereby forming a flat quantum dot film. The quantum dot film obtained from the preparation method, when applied to the quantum dot light emitting device, can significantly improve the electro-optical efficiency and lifespan of the device.