Patents by Inventor Lilac Amirav

Lilac Amirav has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8784685
    Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: July 22, 2014
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Efrat Lifshitz, Ariel Kigel, Maya Brumer-Gilary, Aldona Sashchiuk, Lilac Amirav, Viktoria Kloper, Dima Cheskis, Ruth Osovsky
  • Patent number: 8030194
    Abstract: A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vaporizing the solvent of said spray droplets, consequently producing a stream of unsupported semiconductor nanoparticles; and (iv) collecting said unsupported semiconductor nanoparticles on a support.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: October 4, 2011
    Assignee: Technion Research and Development Foundation Ltd.
    Inventors: Lilac Amirav, Efrat Lifshitz
  • Publication number: 20110006285
    Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.
    Type: Application
    Filed: May 14, 2010
    Publication date: January 13, 2011
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Efrat LIFSHITZ, Ariel Kigel, Maya Brumer-Gilary, Aldona Sashchiuk, Lilac Amirav, Viktoria Kloper, Dima Cheskis, Ruth Osovsky
  • Publication number: 20090263956
    Abstract: A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vaporizing the solvent of said spray droplets, consequently producing a stream of unsupported semiconductor nanoparticles; and (iv) collecting said unsupported semiconductor nanoparticles on a support.
    Type: Application
    Filed: September 22, 2005
    Publication date: October 22, 2009
    Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
    Inventor: Lilac Amirav
  • Publication number: 20080296534
    Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure.
    Type: Application
    Filed: September 8, 2005
    Publication date: December 4, 2008
    Applicant: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
    Inventors: Efrat Lifshitz, Ariel Kigel, Maye Brumer-Gilary, Aldona Sashchiuk, Lilac Amirav