Abstract: A cryogenic magnetic device includes a free layer having a free magnetisation and a magnetic anisotropy favouring the orientation of the free magnetisation according to a first orientation or a second orientation, the magnetic anisotropy being defined by an energy barrier separating the first orientation and the second orientation, the amplitude of the energy barrier being less than 6300 kB, the free layer having a Gilbert damping factor comprised between 0.02 and 0.4; a tunnel barrier extending in contact with the free layer; and a system configured to apply a voltage pulse through the tunnel barrier so as to reduce the amplitude of the energy barrier and switch the free magnetisation.

Abstract: A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

Abstract: A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.