Patents by Inventor Liliana Stan

Liliana Stan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8088503
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: January 3, 2012
    Assignees: UT-Battelle, LLC, The Regents of the University of California
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N Arendt, Liliana Stan, Stephen R Foltyn
  • Patent number: 8003571
    Abstract: A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: August 23, 2011
    Assignee: Los Alamos National Security, LLC
    Inventors: Liliana Stan, Quanxi Jia, Stephen R. Foltyn
  • Patent number: 7851412
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: December 14, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov
  • Patent number: 7737085
    Abstract: Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.
    Type: Grant
    Filed: July 13, 2006
    Date of Patent: June 15, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Paul N. Arendt, Stephen R. Foltyn, Liliana Stan, Igor O. Usov, Haiyan Wang
  • Patent number: 7727934
    Abstract: Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: June 1, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Stephen R. Foltyn, Paul N. Arendt, Haiyan Wang, Liliana Stan
  • Patent number: 7553799
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Grant
    Filed: June 2, 2005
    Date of Patent: June 30, 2009
    Assignee: UT-Battelle, LLC
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N. Arendt, Liliana Stan, Stephen R. Foltyn
  • Publication number: 20090137401
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Application
    Filed: January 30, 2009
    Publication date: May 28, 2009
    Applicant: UT-BATTELLE, LLC
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N. Arendt, Liliana Stan, Stephen R. Foltyn
  • Publication number: 20090036313
    Abstract: A superconducting article comprising a substrate and a single composite layer deposited onto said substrate, wherein said single composite layer comprises Y2O3 and Al2O3, has a thickness of from about 20 nm to about 700 nm, and wherein the ratio of aluminum to yttrium is from about 10:1 to about 1:10; and wherein said superconducting article has a critical current density of at least 1 MA/cm2.
    Type: Application
    Filed: July 29, 2008
    Publication date: February 5, 2009
    Inventors: Liliana Stan, Igor Olegovich Usov, Quanxi Jia, Raymond F. DePaula
  • Publication number: 20080234134
    Abstract: A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.
    Type: Application
    Filed: August 7, 2007
    Publication date: September 25, 2008
    Inventors: Liliana Stan, Quanxi Jia, Stephen R. Foltyn
  • Publication number: 20080197327
    Abstract: The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
    Type: Application
    Filed: February 15, 2007
    Publication date: August 21, 2008
    Inventors: Paul N. Arendt, Liliana Stan, Quanxi Jia, Raymond F. DePaula, Igor O. Usov
  • Publication number: 20070026136
    Abstract: A process is disclosed of preparing a template layer of a biaxially oriented material by ion beam assisted deposition upon a length of a substrate within a vacuum deposition chamber, by passing a length of substrate across a cooling block within a vacuum deposition chamber, with the cooling block configured to contact the substrate and passing a cooled liquid or gas through said cooling block during deposition of said layer of biaxially oriented material by ion beam assisted deposition upon said length of substrate.
    Type: Application
    Filed: July 27, 2005
    Publication date: February 1, 2007
    Inventors: Paul Arendt, Raymond DePaula, Liliana Stan, Igor Usov, James Groves
  • Publication number: 20070012975
    Abstract: Articles are provided including a base substrate having a layer of an IBAD oriented material thereon, and, a layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the layer of an IBAD oriented material. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of barium-containing material selected from the group consisting of barium zirconate, barium hafnate, barium titanate, barium strontium titanate, barium dysprosium zirconate, barium neodymium zirconate and barium samarium zirconate, or a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates.
    Type: Application
    Filed: July 13, 2006
    Publication date: January 18, 2007
    Inventors: Paul Arendt, Stephen Foltyn, Liliana Stan, Igor Usov, Haiyan Wang
  • Publication number: 20060276344
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Application
    Filed: June 2, 2005
    Publication date: December 7, 2006
    Inventors: Mariappan Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul Arendt, Liliana Stan, Stephen Foltyn
  • Publication number: 20060142164
    Abstract: Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.
    Type: Application
    Filed: December 23, 2004
    Publication date: June 29, 2006
    Inventors: Stephen Foltyn, Paul Arendt, Haiyan Wang, Liliana Stan