Abstract: A semiconductor device and a method of fabricating the same are disclosed. A reference direction for a substrate is parallel to a first or second crystallographic direction, and a patterned hard mask layer is distributed along the first crystallographic direction. For substrates with notches oriented in different crystallographic directions, the patterned mask layer may be used as a mask for forming trenches in the substrate surface. When viewed normal to a cross-section perpendicular to the substrate, each trench has a cross-sectional width decreasing from the substrate surface toward the inside of the substrate. This allows the semiconductor device to have increased light absorption and conversion efficiency. Forming the trenches by wet etching can avoid increased dark current due to damage to the trenches’ side surfaces that may be caused by the use of a dry etching process. Thus, an effective improvement in terms of dark current can be achieved.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method of a semiconductor device, comprising following steps: providing a substrate and sequentially forming a first mask layer and a second mask layer on the substrate, wherein the second mask layer covers the first mask layer; dry etching the first mask layer using the second mask layer as a mask, wherein the first mask layer has a patterned first opening; and removing the second mask layer and wet etching the substrate using the patterned first mask layer as a mask to form a plurality of trenches on the substrate, wherein the plurality of trenches extend from a surface of the substrate to inside of the substrate, and a cross-sectional width in a cross-section perpendicular to the substrate of the plurality of trenches gradually decreases from the surface of the substrate to the inside of the substrate.