Abstract: Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnance; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod. A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.

Abstract: Provided is a method for preparing a gallium- and nitrogen-doped monocrystalline silicon using a Czochralski process, including: introducing a doping gas at least including a first amount of nitrogen into a molten mixture in a single crystal furnace; withdrawing a seed from the molten mixture while introducing the doping gas including a second amount of nitrogen into the molten mixture, a second ratio of the second amount of nitrogen to the doping gas being smaller than the first ratio; and upon occurrence of a shoulder of the monocrystalline silicon rod, adjusting the second amount of nitrogen to a third amount in such a manner that a third ratio of the third amount of nitrogen to the doping gas is greater than the second ratio, to form a monocrystalline silicon rod. A solar cell and a photovoltaic module including a gallium- and nitrogen-doped silicon wafer prepared therefrom are also provided.